Power Device HXY MOSFET IXYH75N65C3H1-HXY IGBT with Trench Field Stop Technology and RoHS Compliance
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Product Description
Product Description
The IXYH75N65C3H1 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as UPS, motor drives, boost converters, and portable power stations. The device offers a positive temperature coefficient, fast switching speeds, low VCE(sat), and is reliable and rugged. Halogen-free and green device options are available, complying with RoHS standards.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IXYH75N65C3H1
- Package Type: TO-247
- Unit Quantity: 30 (Tube)
- Certifications: Halogen Free, Green Devices Available, RoHS Compliant
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC @ TC=25C | 100 | A | Collector Current |
| IC @ TC=100C | 60 | A | Collector Current |
| ICM | 200 | A | Pulsed Collector Current, tp limited by TJmax |
| IF @ TC=25C | 100 | A | Diode Continuous Forward Current |
| IF @ TC=100C | 60 | A | Diode Continuous Forward Current |
| IFM | 200 | A | Diode Maximum Forward Current, limited by TJmax |
| VGES | 30 | V | Gate-Emitter Voltage |
| tSC | 8 | s | Short circuit withstand time (VGE=15V, VCC400V, allowed number of short circuits |
| PD @ TC=25C | 250 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| TL | 260 | Maximum Temperature for Soldering | |
| RJC (IGBT) | 0.60 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.55 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VCE(sat) Typ @ IC=60A, VGE=15V, TJ=25 | 1.65 | V | Collector-Emitter Saturation Voltage |
| VGE(TH) Typ @ VCE=VGE, IC=1mA | 5.3 | V | Gate Threshold Voltage |
| VF Typ @ IF=50A, TJ=25 | 1.65 | V | Diode Forward Voltage |
| ICES Max @ VCE=650V, VGE=0V | 10 | A | Collector-Emitter Leakage Current |
| IGES(F) Max @ VGE=+20V | 200 | nA | Gate-Emitter Forward Leakage Current |
| IGES(R) Max @ VGE=-20V | -200 | nA | Gate-Emitter Reverse Leakage Current |
| Cies Typ @ VGE=0V, VCE=25V, f=1.0MHz | 3356 | pF | Input Capacitance |
| Coes Typ @ VGE=0V, VCE=25V, f=1.0MHz | 179 | pF | Output Capacitance |
| Cres Typ @ VGE=0V, VCE=25V, f=1.0MHz | 93 | pF | Reverse Transfer Capacitance |
| Qg Typ @ VCC=520V, ICE=60A, VGE=15V | 183 | nC | Gate charge |
| Qge Typ @ VCC=520V, ICE=60A, VGE=15V | 26 | nC | Gate-emitter charge |
| Qgc Typ @ VCC=520V, ICE=60A, VGE=15V | 83 | nC | Gate-collector charge |
| td(on) Typ @ IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 24 | ns | Turn-on Delay Time |
| tr Typ @ IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 88 | ns | Rise Time |
| td(off) Typ @ IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 124 | ns | Turn-Off Delay Time |
| tf Typ @ IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 73 | ns | Fall Time |
| Eon Typ @ IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 1.40 | mJ | Turn-On Switching Loss |
| Eoff Typ @ IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 1.20 | mJ | Turn-Off Switching Loss |
| Ets Typ @ IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 2.60 | mJ | Total Switching Loss |
| Trr Typ @ IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 136 | ns | Diode Reverse Recovery Time |
| Qrr Typ @ IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 350 | nC | Diode Reverse Recovery Charge |
| Irrm Typ @ IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 6.9 | A | Diode Reverse Recovery Current |
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