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IGBT power device HXY MOSFET AOK50B65M2 with RoHS compliance halogen free and green device options

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The AOK50B65M2 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and increases avalanche energy. It is designed for applications requiring high efficiency and reliability, featuring a positive temperature coefficient, fast switching speeds, and low VCE(sat). The device is available in RoHS compliant, Halogen Free, and Green options.

Product Attributes

  • Brand: HUAXUANYANG
  • Model: AOK50B65M2
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Website: www.hxymos.com
  • Certifications: RoHS Compliant, Halogen Free, Green Devices Available

Technical Specifications

ParameterValueUnitDescription
VCES650VCollector-Emitter Voltage
IC (@TC=25C)100ACollector Current
IC (@TC=100C)50ACollector Current
ICM200APulsed Collector Current, tp limited by TJmax
IF (@TC=25C)100ADiode Continuous Forward Current
IF (@TC=100C)50ADiode Continuous Forward Current
IFM200ADiode Maximum Forward Current, limited by TJmax
VGES±30VGate-Emitter Voltage
tSC4µsShort circuit withstand time (VGE=15V, VCC≤400V,
PD (@TC=25C)300WPower Dissipation
TJmax, Tstg-55 to 175°COperating Junction and Storage Temperature Range
TL260°CMaximum Temperature for Soldering
RθJC (IGBT)0.50°C/WJunction-to-Case (IGBT)
RθJC (Diode)0.65°C/WJunction-to-Case (Diode)
RθJA40°C/WJunction-to-Ambient
VCE(sat).typ (@IC=50A, VGE=15V, TJ=25°C)1.65VCollector-Emitter Saturation Voltage (Typical)
VGE(TH) (@IC=1mA, VCE=VGE)5.3VGate Threshold Voltage (Typical)
VF (@IF=50A, TJ=25°C)1.45VDiode Forward Voltage (Typical)
ICES (@VCE=650V, VGE=0V)10µACollector-Emitter Leakage Current (Max)
IGES(F) (@VGE=+20V)100nAGate-Emitter Forward Leakage Current (Max)
IGES(R) (@VGE=-20V)-100nAGate-Emitter Reverse Leakage Current (Max)
Cies (@VGE=0V, VCE=25V, f=1.0MHz)3363pFInput Capacitance (Typical)
Coes (@VGE=0V, VCE=25V, f=1.0MHz)206pFOutput Capacitance (Typical)
Cres (@VGE=0V, VCE=25V, f=1.0MHz)92pFReverse Transfer Capacitance (Typical)
Qg (@VCC=520V, ICE=50A, VGE=15V)179nCGate charge (Typical)
IC(SC) (VGE=15V, VCC≤400V, tSC≤4µs, TJ≤175°C)469AShort circuit collector current (Max)
td(on) (@IC=50A, VCC=400V, VGE=15V, Rg=5Ω, Inductive Load, TJ=25°C)24nsTurn-on Delay Time (Typical)
tr (@IC=50A, VCC=400V, VGE=15V, Rg=5Ω, Inductive Load, TJ=25°C)86nsRise Time (Typical)
td(off) (@IC=50A, VCC=400V, VGE=15V, Rg=5Ω, Inductive Load, TJ=25°C)122nsTurn-Off Delay Time (Typical)
tf (@IC=50A, VCC=400V, VGE=15V, Rg=5Ω, Inductive Load, TJ=25°C)74nsFall Time (Typical)
Eon (@IC=50A, VCC=400V, VGE=15V, Rg=5Ω, Inductive Load, TJ=25°C)1.38mJTurn-On Switching Loss (Typical)
Eoff (@IC=50A, VCC=400V, VGE=15V, Rg=5Ω, Inductive Load, TJ=25°C)1.14mJTurn-Off Switching Loss (Typical)
Ets (@IC=50A, VCC=400V, VGE=15V, Rg=5Ω, Inductive Load, TJ=25°C)2.52mJTotal Switching Loss (Typical)
Trr (@IF=50A, VCC=400V, di/dt=200A/µs, TJ=25°C)98nsReverse Recovery Time (Typical)
Qrr (@IF=50A, VCC=400V, di/dt=200A/µs, TJ=25°C)1580µCReverse Recovery Charge (Typical)
Irrm (@IF=50A, VCC=400V, di/dt=200A/µs, TJ=25°C)26AReverse Recovery Current (Typical)

Applications

  • UPS
  • Motor drives
  • Boost
  • Portable power station

Package Information

SymbolUnitMINNOMMAX
Amm4.805.005.20
A1mm2.212.412.59
A2mm1.852.002.15
bmm1.111.211.36
b2mm1.912.012.21
b4mm2.913.013.21
cmm0.510.610.75
Dmm20.7021.0021.30
D1mm16.2516.5516.85
Emm15.5015.8016.10
E1mm13.0013.3013.60
E2mm4.805.005.20
E3mm2.302.502.70
eBSC5.44
Lmm19.6219.9220.22
L1mm4.30
ΦPmm3.403.603.80
ΦP1mm7.30
SBSC6.15

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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