Soft Switching IGBT JIAENSEMI JNG15T65KS1 with Enhanced Energy Efficiency and High Speed Performance

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Product Description

JNG15T65KS1 IGBT

JIAEN Trench IGBTs offer lower losses and higher energy efficiency, making them suitable for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.

Product Attributes

Brand: JIAEN
Model: JNG15T65KS1

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Collector-Emitter Voltage	VCES				650	V
Gate-Emitter Voltage	VGES				+30	V
Continuous Collector Current (TC=25)	IC				30	A
Continuous Collector Current (TC=100)	IC				15	A
Pulsed Collector Current (Note 1)	ICM				45	A
Diode Continuous Forward Current (TC=100)	IF				15	A
Diode Maximum Forward Current (Note 1)	IFM				45	A
Short Circuit Withstand Time	tsc				10	us
Maximum Power Dissipation (TC=25)	PD				100	W
Maximum Power Dissipation (TC=100)	PD				40	W
Operating Junction Temperature Range	TJ		-55		+150
Storage Temperature Range	TSTG		-55		+150
Thermal Resistance, Junction to case for IGBT	Rth j-c			1.25		/ W
Thermal Resistance, Junction to case for Diode	Rth j-c			2.3		/ W
Thermal Resistance, Junction to Ambient	Rth j-a			62.5		/ W
Collector-Emitter Breakdown Voltage	BVCES	VGE= 0V, IC= 250uA	650	-	-	V
Collector-Emitter Leakage Current	ICES	VCE= 650V, VGE= 0V	-	-	100	uA
Gate Leakage Current, Forward	IGES	VGE=20V, VCE= 0V	-	-	100	nA
Gate Threshold Voltage	VGE(th)	VGE= VCE, IC= 250uA	4.5	-	6.5	V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE=15V, IC= 15A	-	1.9	2.5	V
Total Gate Charge	Qg	VCC=480V VGE=15V IC=15A	-	40.7	-	nC
Gate-Emitter Charge	Qge		-	4.19	-	nC
Gate-Collector Charge	Qgc		-	30.7	-	nC
Turn-on Delay Time	td(on)	VCC=400V VGE=15V IC=15A RG=15 Inductive Load TC=25	-	16	-	ns
Turn-on Rise Time	tr		-	20	-	ns
Turn-off Delay Time	td(off)		-	94	-	ns
Turn-off Fall Time	tf		-	118	-	ns
Turn-on Switching Loss	Eon		-	0.31	-	mJ
Turn-off Switching Loss	Eoff		-	0.32	-	mJ
Total Switching Loss	Ets		-	0.63	-	mJ
Input Capacitance	Cies	VCE=25V VGE=0V f = 1MHz	-	629	-	pF
Output Capacitance	Coes		-	45	-	pF
Reverse Transfer Capacitance	Cres		-	7	-	pF
Diode Forward Voltage	VF	IF=15A	-	1.55	3.0	V
Diode Reverse Recovery Time	trr	VCE = 400V IF= 15A Rg=15	-	120	-	ns
Diode peak Reverse Recovery Current	IRR		-	17.5	-	A
Diode Reverse Recovery Charge	Qrr		-	690	-	nC