Jilin Sino Microelectronics BU406 220C NPN transistor with fast switching and high current capability

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Product Description

BU406 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The BU406 is a high voltage, fast-switching NPN power transistor designed for applications such as high frequency switching power supplies, high frequency power transformation, and general power amplification circuits. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, in an environmentally friendly (RoHS) package.

Product Attributes

Brand: BU406
Certifications: RoHS

Technical Specifications

Parameter	Symbol	Value(min)	Value(typ)	Value(max)	Unit	Tests conditions
Collector-Emitter Voltage (VBE=0)	VCES	-	-	400	V
Collector-Emitter Voltage (IB=0)	VCEO	-	-	200	V
Emitter-Base Voltage	VEBO	-	-	9	V
Collector Current (DC)	IC	-	-	7	A
Collector Current (pulse)	ICP	-	-	10	A	Pulse Width = 5.0 ms, Duty Cycle < 10%
Base Current (DC)	IB	-	-	4	A
Base Current (pulse)	IBP	-	-	8	A
Total Dissipation (TO-220C)	PC	-	-	60	W
Total Dissipation (TO-3PB)	PC	-	-	120	W
Junction Temperature	Tj	-	-	150
Storage Temperature	Tstg	-55	-	+150
Breakdown Voltage CEO	V(BR)CEO	200	-	-	V	IC=10mA,IB=0
Breakdown Voltage CBO	V(BR)CBO	400	-	-	V	IC=1mA,IE=0
Breakdown Voltage EBO	V(BR)EBO	9	-	-	V	IE=1mA,IC=0
Collector Cut-off Current	ICBO	-	-	10	A	VCB=400V, IE=0
Emitter Cut-off Current	ICEO	-	-	50	A	VCE=200V,IB=0
Base Cut-off Current	IEBO	-	-	10	A	VEB=9V, IC=0
DC Current Gain	Hfe(1)	60	-	85		VCE =5V, IC=2A
DC Current Gain	Hfe(2)	15	-	-		VCE =5V, IC=7A
Collector-Emitter Saturation Voltage	VCE(sat)	-	-	1.5	V	IC=5A, IB=500mA
Base-Emitter Saturation Voltage	VBE(sat)	-	-	1.5	V	IC=5A, IB=500mA
Transition Frequency	fT	10	-	-	MHz	VCE=10V, IC=0.5A
Thermal Resistance Junction Case (TO-220C)	Rth(j-c)	-	-	2.08	/W
Thermal Resistance Junction Case (TO-247)	Rth(j-c)	-	-	1.05	/W