switching device HXY MOSFET RGS80TSX2GC11-HXY optimized for conduction loss reduction and efficiency
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Product Description
RGS80TSX2GC11 Insulated Gate Bipolar Transistor
The RGS80TSX2GC11 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching efficiency, and increasing avalanche energy. It is designed for applications requiring high reliability and performance, such as motor drives and onboard chargers (OBC).
Product Attributes
- Brand: HUAXUANYANG
- Model: RGS80TSX2GC11
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Technology: Trench and Field Stop (T-FS)
- Certifications: AEC-Q101 Qualified, RoHS Compliant, Halogen Free and Green Devices Available
- Package Type: TO-247
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 80 | A | Collector Current |
| IC (@TC=100C) | 40 | A | Collector Current |
| ICM | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| VGE(TH) (Typ.) | 5.3 | V | Gate Threshold Voltage |
| VCE(sat).typ (@IC=40A, TJ=25C) | 1.70 | V | Collector-Emitter Saturation Voltage |
| PD (@TC=25C) | 441 | W | Power Dissipation |
| TJmax, Tstg | 55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| Cies (Typ.) | 3980 | pF | Input Capacitance |
| Qg (Typ.) | 346 | nC | Gate charge |
| td(on) (Typ. @TJ=25C) | 25 | ns | Turn-on Delay Time |
| tr (Typ. @TJ=25C) | 28 | ns | Rise Time |
| td(off) (Typ. @TJ=25C) | 262 | ns | Turn-Off Delay Time |
| tf (Typ. @TJ=25C) | 149 | ns | Fall Time |
| Eon (Typ. @TJ=25C) | 1.30 | mJ | Turn-On Switching Loss |
| Eoff (Typ. @TJ=25C) | 2.30 | mJ | Turn-Off Switching Loss |
| Ets (Typ. @TJ=25C) | 3.60 | mJ | Total Switching Loss |
| Trr (Typ. @TJ=25C) | 94 | ns | Reverse Recovery Time |
| Qrr (Typ. @TJ=25C) | 225 | nC | Reverse Recovery Charge |
| Irrm (Typ. @TJ=25C) | 9.7 | A | Reverse Recovery Current |
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