Jilin Sino Microelectronics 3DD13007MD transistor offering high breakdown voltage for power electronics

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Product Description

Product Overview

The 3DD13007MD is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Certifications: RoHS

Technical Specifications

Order Code	Marking	Package	IC (A)	VCEO (V)	PC (W)
3DD13007MD-C-B	13007MD	TO-220C	8	400	80
3DD13007MD-C1-B	13007MD	TO-220C-S1	8	400	80
3DD13007MD-FA-B	13007MD	TO-220HF	8	400	45
3DD13007MD-F-B	13007MD	TO-220MF	8	400	45
3DD13007MD-F1-B	13007MD	TO-220MF-K1	8	400	45
3DD13007MD-B-B	13007MD	TO-262	8	400	80
3DD13007MD-S-C	13007MD	TO-263	8	400	80
3DD13007MD-S-A	13007MD	TO-263	8	400	80

Main Characteristics

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage (VBE=0)	VCES	700	V
Collector-Emitter Voltage (IB=0)	VCEO	400	V
Emitter-Base Voltage	VEBO	9	V
Collector Current (DC)	IC	8	A
Collector Current (pulse)	ICP	16	A
Base Current (DC)	IB	4	A
Base Current (pulse)	IBP	8	A
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55~+150

Electrical Characteristics

Parameter	Test Conditions	Min	Typ	Max	Unit
V(BR)CEO	IC=10mA,IB=0	400	-	-	V
V(BR)CBO	IC=1mA,IE=0	700	-	-	V
V(BR)EBO	IE=1mA,IC=0	9	-	-	V
ICBO	VCB=700V, IE=0	-	-	100	A
ICEO	VCE=400V,IB=0	-	-	50	A
IEBO	VEB=9V, IC=0	-	-	10	A
Hfe(1)	VCE =5V, IC=1A	8	-	50	-
Hfe(2)	VCE =5V, IC=5A	5	-	-	-
VCE(sat)(1)	IC=5A, IB=1A	-	-	1.8	V
VCE(sat)(2)	IC=8A, IB=2A	-	-	2.5	V
VBE(sat)	IC=5A, IB=1A	-	-	2.0	V
tf	VCC=24V IC=5A,IB1=-IB2=1A	-	-	0.7	S
ts	-	-	-	4	S
fT	VCE=10V, IC=0.5A	4	-	-	MHz