High temperature IGBT HXY MOSFET GWA40MS120DF4AG-HXY with 40 amp collector current and RoHS compliance
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Product Description
Product Overview
The GWA40MS120DF4AG is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is AEC-Q101 qualified and designed for high-temperature operation up to 175, making it suitable for demanding applications.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen, China
- Certifications: AEC-Q101 Qualified, RoHS Compliant, Halogen Free and Green Devices Available
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC | 40 | A | Collector Current @TC=100C |
| VCE(sat).typ | 1.70 | V | Collector-Emitter Saturation Voltage (Typical) |
| ICM | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| PD | 441 | W | Power Dissipation @TC=25C |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case Thermal Resistance (IGBT) |
| RJA | 40 | /W | Junction-to-Ambient Thermal Resistance |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| ICES | 10 | A | Collector-Emitter Leakage Current @VCE=1200V, VGE=0V |
| Cies | 3980 | pF | Input Capacitance @VGE=0V, VCE=25V, f=1.0MHz |
| Qg | 346 | nC | Gate Charge @VCC=960V, ICE=40A, VGE=15V |
| td(on) | 25 | ns | Turn-on Delay Time @TJ=25 |
| tf | 149 | ns | Fall Time @TJ=25 |
| Eon | 1.30 | mJ | Turn-On Switching Loss @TJ=25 |
| Eoff | 2.30 | mJ | Turn-Off Switching Loss @TJ=25 |
| Trr | 94 | ns | Reverse Recovery Time @TJ=25 |
| Qrr | 225 | nC | Reverse Recovery Charge @TJ=25 |
| Package Type | TO-247 | ||
| Device Per Unit | 30 | Tube | Quantity |
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