Jilin Sino Microelectronics 3DD4612DT 92 high voltage transistor for fast switching power electronics

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The 3DD4612DT/M is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for chargers, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Origin: China
Certifications: RoHS (Halogen Free option available)

Technical Specifications

Order Code	Marking	Halogen Free	Package	Packaging	IC (A)	VCEO (V)	PC (TO-92) (W)	PC (TO-126) (W)
3DD4612DT-O-T-B-A	4612DT	NO	TO-92	Brede	1.5	450	1	-
3DD4612DT-O-T-N-C	4612DT	NO	TO-92	Bag	1.5	450	1	-
3DD4612DT-R-T-B-A	4612DT	YES	TO-92	Brede	1.5	450	1	-
3DD4612DT-R-T-N-C	4612DT	YES	TO-92	Bag	1.5	450	1	-
3DD4612DM-O-M-N-C	4612DM	NO	TO-126	Bag	1.5	450	-	20
3DD4612DM-R-M-N-C	4612DM	YES	TO-126	Bag	1.5	450	-	20

Parameter	Symbol	Value	Unit	Test Conditions	Min	Typ	Max
Collector-Emitter Voltage (VBE=0)	VCES	700	V	-	-	-	-
Collector-Emitter Voltage (IB=0)	VCEO	450	V	-	-	-	-
Emitter-Base Voltage	VEBO	9	V	-	-	-	-
Collector Current (DC)	IC	1.5	A	-	-	-	-
Collector Current (pulse)	ICP	3.0	A	-	-	-	-
Junction Temperature	Tj	150		-	-	-	-
Storage Temperature	Tstg	-55~+150		-	-	-	-
Breakdown Voltage, Collector-Emitter	V(BR)CEO	450	V	IC=10mA,IB=0	450	500	-
Breakdown Voltage, Collector-Base	V(BR)CBO	700	V	IC=1mA,IE=0	700	800	-
Breakdown Voltage, Emitter-Base	V(BR)EBO	9	V	IE=1mA,IC=0	9	14	-
Collector Cut-off Current	ICBO	1	A	VCB=700V, IE=0	-	-	1
Collector Cut-off Current	ICEO	1	mA	VCE=450V,IB=0	-	-	1
Emitter Cut-off Current	IEBO	0.5	A	VEB=7V, IC=0	-	-	0.5
DC Current Gain	hFE	10-40	-	VCE =10V, IC=100mA	10	22	40
DC Current Gain	hFE	3.0-5.0	-	VCE=5V, IC=1.5A	3.0	5.0	-
Collector-Emitter Saturation Voltage	VCE(sat)	0.3-0.8	V	IC=0.5A, IB=0.1A	0.3	-	0.8
Base-Emitter Saturation Voltage	VBE(sat)	1.0-1.2	V	IC=0.5A, IB=0.1A	-	1.0	1.2
Fall Time	tf	0.7	S	VCC=24V IC=0.25A,IB1=-IB2=0.05A	-	-	0.7
Storage Time	ts	1.5-4.0	S	IC=0.25A	1.5	-	4.0
Transition Frequency	fT	4	MHz	VCE=10V, IC=0.1A	4	-	-
Thermal Resistance Junction Ambient	Rth(j-a)	125	/W	TO-92	-	-	125
Thermal Resistance Junction Case	Rth(j-c)	6.25	/W	TO-126	-	-	6.25