Durable HXY MOSFET 2P4M designed for hair straighteners and electromagnetic interference resistance

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Product Description

Product Overview

The 2P4M 2A SCR series offers a high dv/dt rate with robust resistance to electromagnetic interference. These thyristors are particularly recommended for applications such as residual current circuit breakers, hair straighteners, and igniters.

Product Attributes

Brand: HUAXUANYANG ELECTRONICS CO.,LTD
Model: 2P4M
Origin: Shenzhen, China
Material: Plastic-Encapsulate
Package Outline: TO-126
Website: www.hxymos.com

Technical Specifications

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Electrical Characteristics	IGT	VD=12V, RL=100		0.8		V
	VGT				2.500	V
	VGD	VD=VDRM, Tj=110C	0.2			V
Holding Current	IH	IT=50mA			0.098	A
dV/dt	dV/dt	VD=2/3VDRM, Tj=110C, RGK=1K		20		V/s
On-state Voltage	VTM	ITM=2A			1.6	V
Leakage Current	IDRM/IRRM	VD=VDRM=VRRM, RGK=1k			0.0001	A
Absolute Maximum Ratings	Storage junction temperature range	Tstg		-40	150	C
	Operating junction temperature range	Tj				125	C
	Repetitive peak off-state voltage	VDRM	Tj=25C			600	V
	Repetitive peak reverse voltage	VRRM	Tj=25C			600	V
	RMS on-state current	IT(RMS)				2	A
Non repetitive surge peak on-state current	ITSM	Full cycle, F=50Hz			20	A

Package Outline Dimensions (TO-126)

Symbol	Dimensions In Millimeters	Dimensions In Inches
A	1.100 - 1.500	0.043 - 0.059
A1	0.660 - 0.860	0.026 - 0.034
b	1.170 - 1.370	0.046 - 0.054
b1	0.450 - 0.600	0.018 - 0.024
c	2.290 TYP	0.090 TYP
D	7.400 - 7.800	0.291 - 0.307
E	10.600 - 11.000	0.417 - 0.433
e	4.480 - 4.680	0.176 - 0.184
e1	0.000 - 0.300	0.000 - 0.012
h	15.300 - 15.700	0.602 - 0.618
L	2.100 - 2.300	0.083 - 0.091
L1	3.900 - 4.100	0.154 - 0.161
P	3.000 - 3.200	0.118 - 0.126