motor control components including HXY MOSFET BT134-600 glass passivated triacs with plastic package

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Product Description

Product Overview

Glass passivated triacs in a plastic package, designed for applications requiring high bidirectional transient and blocking voltage capability with excellent thermal cycling performance. Ideal for motor control, industrial and domestic lighting, heating, and static switching.

Product Attributes

Brand: HUAXUANYANG ELECTRONICS CO.,LTD (HXY)
Origin: Shenzhen, China
Package Type: TO-92
Material: Plastic-Encapsulate Thyristors

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VDRM /VRRM	repetitive peak off-state voltage				600	V
IGM	Peak Gate Current				-	A
VGM	Peak gate voltage				-	V
PGM	Peak gate power				0.5	W
Tj G(AV)	Junction Temperature		-40 ~ 125			C
IT(RMS)	RMS on-state current				16	A
I 2 T	Non repetitive surge peak on-state current	t = 2ms T j =25 C			200	A
I 2 T	Non repetitive surge peak on-state current	t =16.7ms T j =25 C			16	A
I t	I t for fusing	t = 10 ms			2	A s
dl/dt	Critical-rate of rise of commutation current	IG=2IGT tr100ns F=120Hz			50	A/us
VDRM=VRRM	Repetitive Peak Off-State Current	Tj =125 C			0.8	mA
IDRM,IRRM	Repetitive Peak Reverse Current	VDRM= 5 mA			0.8	mA
VGD	Gate non-trigger voltage	VD= 1/2V DRM			5	V
VTM	On-state voltage	IT=2A,tp=380us		1.65		V
IGT	Gate trigger current	T2(+), G(+) VD=12V RL=100			10	mA
IGT	Gate trigger current	T2(+), G(-) VD=12V RL=100			2	mA
IGT	Gate trigger current	T2(-), G(+) VD=12V RL=100			2	mA
IGT	Gate trigger current	T2(-), G(-) VD=12V RL=100			2	mA
VGT	Gate trigger voltage	T2(+), G(+) VD=12V RL=100			2.5	V
VGT	Gate trigger voltage	T2(+), G(-) VD=12V RL=100			2.5	V
VGT	Gate trigger voltage	T2(-), G(+) VD=12V RL=100			2.5	V
VGT	Gate trigger voltage	T2(-), G(-) VD=12V RL=100			2.5	V
IH	Holding current	VD=12V,IGT=100mA			0.8	mA
dV/dt	Critical-rate of rise of commutation voltage	(dl/dt)c=5.4A/ms Gate open			20	V/us
t gt	Turn-on time	ITM =16A ,VDM=V DRM VDM=67%V DRM(MAX)			3.3	us
(dl/dt)c	Critical-rate of rise of commutation current	Tj =125 C			5.4	A/ms
Tstg	Storage Temperature		-40 ~ 150			C