Insulated Gate Bipolar Transistor HXY MOSFET DGTD65T50S1PT-HXY with Halogen Free and RoHS Compliance
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Product Description
Insulated Gate Bipolar Transistor DGTD65T50S1PT
The DGTD65T50S1PT is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as UPS, motor drives, boost converters, and portable power stations. The device features a positive temperature coefficient, fast switching, low VCE(sat), and is reliable and rugged. Halogen-free and green (RoHS Compliant) options are available.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: DGTD65T50S1PT
- Package Type: TO-247
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: RoHS Compliant, Halogen Free and Green Devices Available
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC | 50 | A | Collector Current @TC=100C |
| IC (25C) | 100 | A | Collector Current @TC=25C |
| ICM | 200 | A | Pulsed Collector Current, tp limited by TJmax |
| VCE(sat).typ | 1.65 | V | Collector-Emitter Saturation Voltage Typical |
| PD (25C) | 300 | W | Power Dissipation @TC=25C |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.50 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.65 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VGE(TH) | 4.5 - 6.5 | V | Gate Threshold Voltage (Min - Max) |
| ICES | 10 | A | Collector-Emitter Leakage Current @VCE=650V, VGE=0V |
| Cies | 3363 | pF | Input Capacitance @VGE=0V, VCE=25V, f=1.0MHz |
| Coes | 206 | pF | Output Capacitance |
| Cres | 92 | pF | Reverse Transfer Capacitance |
| Qg | 179 | nC | Gate charge |
| td(on) (TJ=25C) | 24 | ns | Turn-on Delay Time |
| tr (TJ=25C) | 86 | ns | Rise Time |
| td(off) (TJ=25C) | 122 | ns | Turn-Off Delay Time |
| tf (TJ=25C) | 74 | ns | Fall Time |
| Eon (TJ=25C) | 1.38 | mJ | Turn-On Switching Loss |
| Eoff (TJ=25C) | 1.14 | mJ | Turn-Off Switching Loss |
| Ets (TJ=25C) | 2.52 | mJ | Total Switching Loss |
| Trr (TJ=25C) | 98 | ns | Reverse Recovery Time |
| Qrr (TJ=25C) | 1580 | C | Reverse Recovery Charge |
| Irrm (TJ=25C) | 26 | A | Reverse Recovery Current |
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