IGBT Transistor HXY MOSFET BIDW50N65T-HXY Featuring Reduced Conduction Losses for Motor Drives and UPS
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The BIDW50N65T is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching speed, and increasing avalanche energy capability. It is suitable for applications such as UPS, motor drives, boost converters, and portable power stations.
Product Attributes
- Brand: HUAXUANYANG
- Model: BIDW50N65T
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Technology: Trench and Field Stop (T-FS)
- Certifications: Halogen Free, Green Devices Available, RoHS Compliant
- Package Type: TO-247
Technical Specifications
| Parameter | Value | Unit | Conditions |
| Absolute Ratings | |||
| VCES | 650 | V | |
| IC | 100 | A | @TC=25C |
| IC | 50 | A | @TC=100C |
| ICM | 200 | A | Pulsed Collector Current, tp limited by TJmax |
| IF | 100 | A | Diode Continuous Forward Current @TC=25C |
| IF | 50 | A | Diode Continuous Forward Current @TC=100C |
| IFM | 200 | A | Diode Maximum Forward Current, limited by TJmax |
| VGES | 30 | V | |
| tSC | 4 | s | Short circuit withstand time VGE=15V, VCC400V, allowed number of short circuits<1000, times between short circuits1.0s, TJ175C |
| PD | 300 | W | @TC=25C |
| TJmax, Tstg | 55 to 175 | Operating Junction and Storage Temperature Range | |
| TL | 260 | Maximum Temperature for Soldering | |
| Thermal Characteristics | |||
| RJC (IGBT) | 0.50 | /W | Junction-to-Case |
| RJC (Diode) | 0.65 | /W | Junction-to-Case |
| RJA | 40 | /W | Junction-to-Ambient |
| Electrical Characteristics (Static) | |||
| VCES (Breakdown Voltage) | 650 | V | VGE =0V, IC=1mA |
| VCE(sat) | 1.65 | V | VGE =15V, IC =50A, TJ=25 (Typ.) |
| VGE(TH) (Gate Threshold Voltage) | 4.5 - 6.5 | V | VCE=VGE, IC=1mA |
| VF (Diode Forward Voltage) | 1.45 | V | IF=50A, TJ=25 (Typ.) |
| ICES (Leakage Current) | 10 | A | VCE=650V, VGE=0V (Max.) |
| IGES(F) (Gate Forward Leakage) | 100 | nA | VGE=+20V (Max.) |
| IGES(R) (Gate Reverse Leakage) | -100 | nA | VGE=-20V (Max.) |
| Electrical Characteristics (Dynamic) | |||
| Cies (Input Capacitance) | 3363 | pF | VGE=0V, VCE=25V, f=1.0MHz (Typ.) |
| Coes (Output Capacitance) | 206 | pF | (Typ.) |
| Cres (Reverse Transfer Capacitance) | 92 | pF | (Typ.) |
| Qg (Gate Charge) | 179 | nC | VCC=520V, ICE=50A, VGE=15V (Typ.) |
| Qge (Gate-Emitter Charge) | 31 | nC | (Typ.) |
| Qgc (Gate-Collector Charge) | 87 | nC | (Typ.) |
| IC(SC) (Short Circuit Collector Current) | 469 | A | VGE=15V,VCC400V, tSC4s,TJ175 (Max.) |
| IGBT Switching Characteristics (TJ=25) | |||
| td(on) (Turn-on Delay Time) | 24 | ns | IC=50A, VCC=400V, VGE=15V, Rg=5 (Typ.) |
| tr (Rise Time) | 86 | ns | (Typ.) |
| td(off) (Turn-Off Delay Time) | 122 | ns | (Typ.) |
| tf (Fall Time) | 74 | ns | (Typ.) |
| Eon (Turn-On Switching Loss) | 1.38 | mJ | (Typ.) |
| Eoff (Turn-Off Switching Loss) | 1.14 | mJ | (Typ.) |
| Ets (Total Switching Loss) | 2.52 | mJ | (Typ.) |
| IGBT Switching Characteristics (TJ=175) | |||
| td(on) (Turn-on Delay Time) | 33 | ns | IC=50A, VCC=400V, VGE=15V, Rg=5 (Typ.) |
| tr (Rise Time) | 97 | ns | (Typ.) |
| td(off) (Turn-Off Delay Time) | 146 | ns | (Typ.) |
| tf (Fall Time) | 84 | ns | (Typ.) |
| Eon (Turn-On Switching Loss) | 1.65 | mJ | (Typ.) |
| Eoff (Turn-Off Switching Loss) | 1.32 | mJ | (Typ.) |
| Ets (Total Switching Loss) | 2.97 | mJ | (Typ.) |
| Diode Characteristics (TJ=25) | |||
| Trr (Reverse Recovery Time) | 98 | ns | IF=50A, VCC=400V, di/dt=200A/s (Typ.) |
| Qrr (Reverse Recovery Charge) | 1580 | C | (Typ.) |
| Irrm (Reverse Recovery Current) | 26 | A | (Typ.) |
| Diode Characteristics (TJ=175) | |||
| Trr (Reverse Recovery Time) | 104 | ns | IF=50A, VCC=400V, di/dt=200A/s (Typ.) |
| Qrr (Reverse Recovery Charge) | 1640 | C | (Typ.) |
| Irrm (Reverse Recovery Current) | 27 | A | (Typ.) |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina