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Durable HXY MOSFET Z0109NN6AA4-HXY offering robust dvdt rate designed for industrial and consumer safety devices

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Product Description

Product Overview

The Z0109NN6AA4 thyristors offer a high dv/dt rate with strong resistance to electromagnetic interference. They are particularly recommended for applications such as residual current circuit breakers, hair straighteners, and igniters.

Product Attributes

  • Brand: HUAXUANYANG HXY
  • Manufacturer: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Website: www.hxymos.com
  • Material: Plastic-Encapsulate

Technical Specifications

SymbolParameterConditionsMinTypMaxUnit
Absolute Maximum Ratings
VDRM /VRRMRepetitive peak off-state voltage800V
IT(RMS)RMS on-state current1.0A
ITSMNon repetitive surge peak on-state currentt =20ms Tj =25C8A
I2tI2t for fusingt =10 ms2A2s
(dl/dt)cCritical-rate of rise of commutation currentIG=2IGT t 100ns100A/s
PG(AV)Average Gate Power DissipationTj =125C0.4W
TjJunction Temperature125C
TstgStorage Temperature-40150C
Electrical Characteristics (Tj=25C unless otherwise specified)
IDRM,IRRMRepetitive Peak Off-State Current Repetitive Peak Reverse CurrentVDRM=VRRM Tj =25C5mA
IDRM,IRRMRepetitive Peak Off-State Current Repetitive Peak Reverse CurrentVDRM=VRRM Tj =125C1mA
VTMOn-state voltageIT=1A,tp=380s1.65V
IGTGate trigger currentVD=12V,RL=1000.8mA
VGTGate trigger voltageVD=12V,RL=1000.8V
IHHolding currentVD=12V,IGT=100mA30mA
dV/dtCritical-rate of rise of commutation voltageVDM=67%VDRM Gate open Tj =125C20V/s
(dl/dt)cRate of change of commutating voltageVDM=400V, Tj =125C5.4A/ms
tgtTurn-on timeITM =16A ,VDM=VDRM tp=20 s IG =0.1A,dlG/dt=5A/S2s

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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