Plastic encapsulated triac HXY MOSFET BT138-800E for motor control lighting and heating applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The BT138-800E is a glass-passivated triac in a plastic envelope, designed for applications requiring high bidirectional transient and blocking voltage capability, along with excellent thermal cycling performance. Its typical applications include motor control, industrial and domestic lighting, heating, and static switching.

Product Attributes

Brand: HUAXUANYANG ELECTRONICS (HXY)
Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Material: Plastic-Encapsulate Thyristors
Package: TO-252-2L

Technical Specifications

Symbol	Parameter	Unit	Conditions	Min	Typ	Max
Maximum Ratings (Ta=25C unless otherwise noted)
VDRM /VRRM	repetitive peak off-state voltage	V	-	-	-	800
IGM	Peak Gate Current	A	-	-	-	5
VGM	Peak gate voltage	V	-	-	-	5
PGM	Peak gate power	W	-	-	-	5
Tj	Junction Temperature	C	-40 ~ 125	-	-	125
G(AV)	Average Gate Power Dissipation	W	-	-	0.5	-
IT(RMS)	RMS on-state current	A	T =125 j C	-	-	2
ITSM	Non repetitive surge peak on-state current	A	t =20ms Tj =25C	-	-	2500
I t	I t for fusing	A s	t =16.7ms Tj =25C	-	-	30
dl/dt	Critical-rate of rise of commutation current	A/us	IG=2IGT tr100ns F=120Hz	-	-	10
dV/dt	Critical-rate of rise of commutation voltage	V/us	Tj =125C	-	-	50
Tstg	Storage Temperature	C	-40 ~ 150	-	-	150
Electrical Characteristics (Ta=25C unless otherwise specified)
IDRM,IRRM	Repetitive Peak Off-State Current Repetitive Peak Reverse Current	mA	VDRM=VRRM T =25 j C	-	-	0.8
IDRM,IRRM	Repetitive Peak Off-State Current Repetitive Peak Reverse Current	mA	VDRM=VRRM T =125 j C	-	-	0.8
VGD	Gate non-trigger voltage	V	VD= 1/2V DRM	-	-	0.2
VTM	On-state voltage	V	IT= 6A,tp=380us	-	-	1.65
IGT	Gate trigger current	mA	IT2(+), G(+) VD=12V RL=100	-	-	50
IGT	Gate trigger current	mA	IT2(+), G(-) VD=12V RL=100	-	-	50
IGT	Gate trigger current	mA	IT2(-), G(-) VD=12V RL=100	-	-	50
IGT	Gate trigger current	mA	IT2(-), G(+) VD=12V RL=100	-	-	50
VGT	Gate trigger voltage	V	IT2(+), G(+) VD=12V RL=100	-	-	0.8
VGT	Gate trigger voltage	V	IT2(+), G(-) VD=12V RL=100	-	-	0.8
VGT	Gate trigger voltage	V	IT2(-), G(-) VD=12V RL=100	-	-	0.8
VGT	Gate trigger voltage	V	IT2(-), G(+) VD=12V RL=100	-	-	0.8
IH	Holding current	mA	VD=12V ,IGT=100mA	-	-	30
t gt	Turn-on time	us	ITM =16A ,VDM=V DRM VDM=67%V DM T =125 j C	-	-	4
(dl/dt)c	Critical-rate of rise of commutation current	A/uS	IG =0.1A,dl /dt=5A/uS	-	-	10
dV/dt	Rate of change of commutating voltage	V/us	Tj =125 j C	-	-	20