1200V 40A HXY MOSFET IKW40N120H3-HXY IGBT featuring fast switching low VCEsat ideal for PTC and motor drive applications
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Product Description
Product Overview
The IKW40N120H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as PTC, motor drives, and onboard chargers (OBC). The device offers a positive temperature coefficient, fast switching, low VCE(sat), and is reliable and rugged, meeting AEC-Q101 qualification standards. It operates at temperatures up to 175C and is available in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: AEC-Q101 Qualified, RoHS Compliant
- Package Type: TO-247
- Device Per Unit Quantity: 30 (Tube)
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC | 40 | A | Collector Current @TC=100C |
| IC (25C) | 80 | A | Collector Current @TC=25C |
| VCE(sat).typ | 1.70 | V | Collector-Emitter Saturation Voltage Typical |
| PD (@TC=25C) | 441 | W | Power Dissipation @TC=25C |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case Thermal Resistance (IGBT) |
| RJA | 40 | /W | Junction-to-Ambient Thermal Resistance |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| VF (IF=40A, TJ=25C) | 1.85 | V | Diode Forward Voltage |
| ICES (VCE=1200V, VGE=0V) | 10 | A | Collector-Emitter Leakage Current |
| Cies | 3980 | pF | Input Capacitance |
| Qg | 346 | nC | Gate Charge |
| td(on) (TJ=25C) | 25 | ns | Turn-on Delay Time |
| tr (TJ=25C) | 28 | ns | Rise Time |
| td(off) (TJ=25C) | 262 | ns | Turn-Off Delay Time |
| tf (TJ=25C) | 149 | ns | Fall Time |
| Eon (TJ=25C) | 1.30 | mJ | Turn-On Switching Loss |
| Eoff (TJ=25C) | 2.30 | mJ | Turn-Off Switching Loss |
| Trr (TJ=25C) | 94 | ns | Reverse Recovery Time |
| Qrr (TJ=25C) | 225 | nC | Reverse Recovery Charge |
| Irrm (TJ=25C) | 9.7 | A | Reverse Recovery Current |
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Sellina