Switching Application Thyristor HXY MOSFET MCR100-6 Plastic Encapsulated SOT23 Package

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Product Description

Product Overview

The MCR100-6 and MCR100-8 are plastic-encapsulated thyristors designed for general-purpose switching applications. They offer an RMS on-state current up to 0.8A and are available in a SOT-23 package.

Product Attributes

Brand: HUAXUANYANG ELECTRONICS
Origin: Shenzhen, China
Material: Plastic-Encapsulate
Model Series: MCR100-6, MCR100-8
Package Type: SOT-23

Technical Specifications

Symbol	Parameter	Part	Value	Unit	Test Conditions
VDRM / VRRM	Repetitive peak off-state voltage / Repetitive peak reverse voltage	MCR100-6	400	V
VDRM / VRRM	Repetitive peak off-state voltage / Repetitive peak reverse voltage	MCR100-8	600	V
VEBO	Emitter-Base Voltage		7	V
IT(RMS)	RMS on-state current		0.8	A	(T=60)
ITSM	Non repetitive surge peak on-state current		8	A	(tp=10ms)
IGM	Peak gate current		0.2	A	(tp=20s,Tj=110)
PGM	Peak gate power		500	mW	(tp=20s,Tj=110)
PG(AV)	Average gate power dissipation		100	mW	(Tj=110)
TJ	Operation Junction Temperature Range		-40+110
Tstg	Storage Temperature Range		-40+150
VTM	On state voltage		1.7	V	ITM=1A ,tp=380S
VGT	Gate trigger voltage		0.8	V	VAK=7V
V(BR)EBO	Peak Repetitive forward and Reverse blocking voltage	MCR100-6	400	V	IDRM/IRRM=100A
V(BR)EBO	Peak Repetitive forward and Reverse blocking voltage	MCR100-8	600	V	IDRM/IRRM=100A
IDRM / IRRM	Peak forward or reverse blocking Current		10	A	VAK=VDRM or VRRM
IH	Holding current		5	mA	IHL=20mA ,VAK =7V
IGT	Gate trigger current		1560	A	VAK=7V