High speed switching diode IDCHIP BAW56 with small total capacitance and compact SOT 23 package design

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The BAW56 is a silicon epitaxial planar switching diode designed for ultra-high speed switching applications. It features a small package, low forward voltage, fast reverse recovery time, and small total capacitance, making it ideal for high-performance electronic circuits.

Product Attributes

Brand: BAW56
Origin: Shenzhen Yingruixin Electronics Technology Co., Ltd.
Material: Silicon Epitaxial Planar
Package Type: SOT-23 Plastic Package

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Peak Repetitive Reverse Voltage	VRRM	85	V
Continuous Reverse Voltage	VR	75	V
Forward Current (DC) - Single Diode Loaded	IF	215	mA
Forward Current (DC) - Double Diode Loaded	IF	125	mA
Repetitive Peak Forward Current	IFRM	450	mA
Non-repetitive Peak Forward Surge Current (t = 1 s)	IFSM	0.5	A
Non-repetitive Peak Forward Surge Current (t = 1 ms)	IFSM	1	A
Non-repetitive Peak Forward Surge Current (t = 1 s)	IFSM	4	A
Power Dissipation	Ptot	350	mW
Operating Junction Temperature	Tj	150	OC
Storage Temperature Range	Tstg	-65 to +150	OC
Forward Voltage (at IF = 1 mA)	VF	0.715	V	Max.
Forward Voltage (at IF = 10 mA)	VF	0.855	V	Max.
Forward Voltage (at IF = 50 mA)	VF	1	V	Max.
Forward Voltage (at IF = 150 mA)	VF	1.25	V	Max.
Reverse Current (at VR = 25 V)	IR	30	nA	Max.
Reverse Current (at VR = 75 V)	IR	1	A	Max.
Reverse Current (at VR = 25 V, TJ = 150 OC)	IR	30	A	Max.
Reverse Current (at VR = 75 V, TJ = 150 OC)	IR	50	A	Max.
Diode Capacitance (at VR = 0 , f = 1 MHz)	Cd	2	pF	Max.
Reverse Recovery Time (at IF = IR = 10 mA, RL = 100 )	trr	4	ns	Max.