Plastic encapsulated HXY MOSFET BT134-800 triac designed for heating and motor control applications

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Product Description

Product Overview

The BT134-800 is a series of glass-passivated triacs encapsulated in plastic, designed for applications demanding high bidirectional transient and blocking voltage capabilities, along with excellent thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating, and static switching.

Product Attributes

Brand: HUAXUANYANG ELECTRONICS CO.,LTD
Origin: Shenzhen, China
Package: TO-92
Material: Plastic-Encapsulated

Technical Specifications

Symbol	Parameter	Conditions	Unit	Min	Typ	Max
Maximum Ratings
VDRM /VRRM	repetitive peak off-state voltage	(Ta=25C unless otherwise noted)	V			800
IGM	Peak Gate Current		A			0.5
VGM	Peak gate voltage		V			5
PGM	Peak gate power		W			1
Tj	Junction Temperature		C	-40		125
G(AV)	Average Gate Power Dissipation		W			0.1
IT(RMS)	RMS on-state current		A			4
IT	It for fusing	t = 10 ms	As			16
TSM	Non repetitive surge peak on-state current	t = 2ms T =25C j	A			20
dl/dt	Critical-rate of rise of commutation current	IG=2IGT tr100ns F=120Hz	A/s			50
Tstg	Storage Temperature		C	-40		150
Electrical Characteristics
IDRM,IRRM	Repetitive Peak Off-State Current, Repetitive Peak Reverse Current	VDRM=VRRM T =25C j	mA			0.8
IDRM,IRRM	Repetitive Peak Off-State Current, Repetitive Peak Reverse Current	VDRM=VRRM T =125C j	mA			0.8
VGD	Gate non-trigger voltage	VGM=5V	V			0.2
VTM	On-state voltage	IT=2A,tp=380s	V			1.65
IGT	Gate trigger current	Tj =125C	mA			10
VGT	Gate trigger voltage	Tj =125C	V			2.5
IH	Holding current	VD=12V,IGT=100mA	mA			30
dV/dt	Critical-rate of rise of commutation voltage	Tj =125C	V/s			20
t gt	Turn-on time	ITM =16A ,VDM=V DRM IG =0.1A,dlG/dt=5A/uS	s			2
(dl/dt)c	Rate of change of commutating voltage	Tj =125C	A/s			5.4