Industrial grade Infineon BFP740FESDH6327XTSA1 NPN RF transistor featuring 21 dBm RF input power and 2 kV ESD protection
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) featuring integrated ESD protection. It offers a unique combination of high RF performance and robustness, with a maximum RF input power of 21 dBm and 2 kV ESD robustness (HBM). This transistor is qualified for industrial applications and is suitable for various wireless communication systems, satellite communication, multimedia applications, and ISM applications.
Product Attributes
- Brand: Infineon
- Material: SiGe:C
- Certifications: JEDEC47/20/22
Technical Specifications
| Product Name / Ordering Code | Package | Pin Configuration | Marking | Pieces / Reel | VCEO (V) | VCBO (V) | VCES (V) | IB (mA) | IC (mA) | PRFin (dBm) | VESD (kV) | Ptot (mW) | TJ (C) | TStg (C) | RthJS (K/W) | V(BR)CEO (V) | ICES (nA) | ICBO (nA) | IEBO (A) | hFE | fT (GHz) | CCB (pF) | CCE (pF) | CEB (pF) | Gms (dB) @ 2.4 GHz | NFmin (dB) @ 2.4 GHz | Gms (dB) @ 5.5 GHz | NFmin (dB) @ 5.5 GHz | OIP3 (dBm) @ 5.5 GHz |
| BFP740FESD / BFP740FESDH6327XTSA1 | TSFP-4-1 | 1 = B, 2 = E, 3 = C, 4 = E | T7s | 3000 | 4.2 | 4.9 | 4.2 | -10 to 5 | 45 | 21 | 2 | 160 | 150 | -55 to 150 | 315 | 4.2 to 4.7 | 400 | 400 | 10 | 160 to 400 | 47 | 0.08 | 0.4 | 0.5 | 26 | 0.6 | 20.5 | 0.8 | 23.5 |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina