Low Voltage PNP Switching Transistor Infineon MMBT2907ALT1HTSA1 with High Junction Temperature Rating

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Product Description

Product Overview

The SMBT2907A/MMBT2907A is a PNP Silicon Switching Transistor designed for various applications. It features a low collector-emitter saturation voltage and is Pb-free (RoHS compliant). This transistor is qualified according to AEC Q101 standards. Its complementary type is the SMBT2222A/MMBT2222A (NPN).

Product Attributes

Brand: Infineon Technologies
Certifications: AEC Q101, RoHS compliant
Package: SOT23
Type Marking: s2F

Technical Specifications

Parameter	Symbol	Value	Unit
Maximum Ratings
Collector-emitter voltage	VCEO	60	V
Collector-base voltage	VCBO	60	V
Emitter-base voltage	VEBO	5	V
Collector current	IC	600	mA
Base current	IB	100	mA
Peak base current	IBM	200	mA
Total power dissipation (TS 77 C)	Ptot	330	mW
Junction temperature	Tj	150	C
Storage temperature	Tstg	-65 ... 150	C
Thermal Resistance
Junction - soldering point	RthJS	220	K/W
DC Characteristics
Collector-emitter breakdown voltage (IC = 10 mA, IB = 0)	V(BR)CEO	60	V
Collector-base breakdown voltage (IC = 10 A, IE = 0)	V(BR)CBO	60	V
Emitter-base breakdown voltage (IE = 10 A, IC = 0)	V(BR)EBO	5	V
Collector-base cutoff current (VCB = 50 V, IE = 0)	ICBO	-	A
Collector-base cutoff current (VCB = 50 V, IE = 0, TA = 150 C)	ICBO	0.01	A
Collector-base cutoff current (VCB = 50 V, IE = 0, TA = 150 C)	ICBO	10	A
Emitter-base cutoff current (VEB = 5 V, IC = 0)	IEBO	-	nA
Emitter-base cutoff current (VEB = 5 V, IC = 0)	IEBO	10	nA
DC current gain (IC = 100 A, VCE = 10 V)	hFE	75	-
DC current gain (IC = 1 mA, VCE = 10 V)	hFE	100	-
DC current gain (IC = 10 mA, VCE = 10 V)	hFE	100	-
DC current gain (IC = 150 mA, VCE = 10 V)	hFE	100	-
DC current gain (IC = 500 mA, VCE = 10 V)	hFE	50	-
Collector-emitter saturation voltage (IC = 150 mA, IB = 15 mA)	VCEsat	-	V
Collector-emitter saturation voltage (IC = 500 mA, IB = 50 mA)	VCEsat	0.4	V
Collector-emitter saturation voltage (IC = 500 mA, IB = 50 mA)	VCEsat	1.6	V
Base emitter saturation voltage (IC = 150 mA, IB = 15 mA)	VBEsat	-	V
Base emitter saturation voltage (IC = 500 mA, IB = 50 mA)	VBEsat	1.3	V
Base emitter saturation voltage (IC = 500 mA, IB = 50 mA)	VBEsat	2.6	V
AC Characteristics
Transition frequency (IC = 20 mA, VCE = 20 V, f = 100 MHz)	fT	200	MHz
Collector-base capacitance (VCB = 10 V, f = 1 MHz)	Ccb	-	pF
Collector-base capacitance (VCB = 10 V, f = 1 MHz)	Ccb	8	pF
Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz)	Ceb	-	pF
Emitter-base capacitance (VEB = 0.5 V, f = 1 MHz)	Ceb	30	pF
Delay time (VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V)	td	-	ns
Delay time (VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V)	td	10	ns
Rise time (VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V)	tr	-	ns
Rise time (VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V)	tr	40	ns
Storage time (VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA)	tstg	-	ns
Storage time (VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA)	tstg	80	ns
Fall time (VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA)	tf	-	ns
Fall time (VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA)	tf	30	ns