Wireless network connectivity improvement using Infineon BFP620H7764 RF transistor for mobile systems
Infineon RF Transistors
Infineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. They are designed to enhance system sensitivity, improve interference immunity, and ensure stable signal reception and transmission across multiple or specific bands. These transistors are crucial for enabling universal network availability and connectivity in an increasingly mobile society, supporting the growing demand for data traffic in mobile systems and infrastructure, including small cells and automotive infotainment systems. Infineon's offerings are characterized by high performance, versatility in package options and device features, secure supply with competitive lead times, and high quality and reliability.
Product Attributes
- Brand: Infineon
- Origin: Not specified
- Material: Silicon-germanium (SiGe) based on B9 technology
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Product Family | Generation | Key Technology | fT (max) | NFmin (typical) | Gain (Gmax) | Key Applications | Key Features |
| RF Transistors | 1st 3rd Gen. | SiGe | 68 GHz | 1.42.1 dB | Not specified | General-purpose LNAs | Low noise |
| RF Transistors | 4th Gen. | SiGe | 25 GHz | 1.1 dB | Not specified | General-purpose LNAs | Available with ESD for improved robustness |
| RF Transistors | 5th Gen. | SiGe | 29 GHz | 0.9 dB | Not specified | General-purpose LNAs | Very low noise |
| RF Transistors | 6th Gen. | SiGe | 40 GHz | 0.7 dB | Not specified | General-purpose LNAs | Ultra low noise |
| RF Transistors | 7th Gen. (e.g., BPx740 series) | SiGe:C B7HF | 44 GHz | 0.6 dB (application) / 0.45 dB (sub-GHz) / 0.9 dB (5.5 GHz) | > 10 dB at 10 GHz / 19 dB | WiFi connectivity, Low-Noise Amplifier (LNA), gain block, buffer/driver amplifiers, mixer, VCO | High transition frequency, high gain, high linearity (OP1dB +8.5 dBm, OIP3 +19 dBm at 2.4 GHz), high RF input power, 1.5 kV HBM ESD robustness, broad frequency range (450 MHz to 12 GHz), reduced power consumption, improved input signal power-stress robustness |
| RF Transistors | 8th Gen. (e.g., BFx840x product family) | SiGe:C B9HF | 80 GHz | 0.5 dB (typical) / 0.6 dB (at 5.5 GHz) | Not specified | High-performance WiFi connectivity, Low-Noise Amplifier (LNA) | Best-in-class NF and Gmax, improved BiC, suitable for high-throughput wireless specifications (e.g., 256 QAM in IEEE 802.11ac) |
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