Jilin Sino Microelectronics JCS640C MOSFET designed for switching in electronic lamp ballasts and UPS

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Product Description

Product Overview

The JCS640 is an N-channel enhancement mode MOSFET designed for high-efficiency switching power supplies, electronic lamp ballasts, and UPS systems. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Certifications: RoHS

Technical Specifications

Order Code	Package	Marking	ID (A)	VDSS (V)	Rds(on)-max (@Vgs=10V) (Ω)	Qg-typ (nC)
JCS640S-S-B	TO-263	JCS640S	18.0	200	0.18	47
JCS640S-S-BR	TO-263	JCS640S	18.0	200	0.18	47
JCS640S-S-A	TO-263	JCS640S	18.0	200	0.18	47
JCS640S-S-AR	TO-263	JCS640S	18.0	200	0.18	47
JCS640C-C-B	TO-220C	N/A	18.0	200	0.18	47
JCS640C-C-BR	TO-220C	N/A	18.0	200	0.18	47
JCS640F-F-B	TO-220MF	N/A	18.0	200	0.18	47
JCS640F-F-BR	TO-220MF	N/A	18.0	200	0.18	47

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	BVDSS	ID=250A, VGS=0V	200	-	-	V
Gate Threshold Voltage	VGS(th)	VDS = VGS , ID=250A	2.0	-	4.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=9.0A	-	0.15	0.18	Ω
Input capacitance	Ciss	-	-	1330	1760	pF
Output capacitance	Coss	-	-	181	245	pF
Reverse transfer capacitance	Crss	VDS=25V, VGS=0V, f=1.0MHZ	-	48	65	pF
Total Gate Charge	Qg	-	-	47	62	nC

Parameter	Symbol	Value	Unit
Thermal Resistance, Junction to Case (JCS640C/S)	Rth(j-c)	0.89	/W
Thermal Resistance, Junction to Case (JCS640F)	Rth(j-c)	2.85	/W
Thermal Resistance, Junction to Ambient	Rth(j-A)	62.5	/W