Plastic Encapsulate Thyristor Z0107MN5AA4 HXY MOSFET with 600 Volt Repetitive Peak Off State Voltage

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Product Description

Product Overview

The Z0107MN5AA4 thyristors offer a high dv/dt rate with strong resistance to electromagnetic interference. They are particularly recommended for applications such as residual current circuit breakers, straight hair appliances, and igniters.

Product Attributes

Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Material: Plastic-Encapsulate Thyristors

Technical Specifications

Symbol	Parameter	Conditions	Value	Unit
Absolute Maximum Ratings
VDRM /VRRM	Repetitive peak off-state voltage		600	V
IT(RMS)	RMS on-state current		1.0	A
IGM	Peak Gate Current		1	A
VGM	Peak gate voltage		0.8	V
PGM	Peak gate power		0.4	W
TJ	Junction Temperature		125	C
PG(AV)	Average Gate Power Dissipation		0.4	W
ITSM	Non-repetitive surge peak on-state current	t =20ms Tj =25C	8	A
I2t	For fusing	t =16.7ms Tj =25C	1	As
I2t	For fusing	t =10 ms	2	As
(dl/dt)c	Critical-rate of rise of commutation current	IG=2IGT t 100ns	50	A/s
dV/dt	Critical-rate of rise of commutating voltage	Gate open Tj =125C	20	V/s
VDRM/VRRM	Repetitive Peak Off-State Voltage		600	V
IT(RMS)	RMS on-state current		1.0	A
Tstg	Storage Temperature		-40 ~ 150	C
Electrical Characteristics (Tj=25C unless otherwise specified)
IDRM,IRRM	Repetitive Peak Off-State Current / Repetitive Peak Reverse Current	VDRM=VRRM Tj =125C	5	mA
IDRM,IRRM	Repetitive Peak Off-State Current / Repetitive Peak Reverse Current	VDRM=VRRM Tj =25C	1	mA
VGD	Gate non-trigger voltage	VD=1/2VDRM	0.2	V
VTM	On-state voltage	IT=1A,tp=380s	1.65	V
IGT	Gate trigger current	T2(+), G(+) VD=12V,RL=100	0.8	mA
IGT	Gate trigger current	T2(+), G(-) VD=12V,RL=100	0.8	mA
IGT	Gate trigger current	T2(-), G(-) VD=12V,RL=100	0.8	mA
VGT	Gate trigger voltage	T2(+), G(+) VD=12V RL=100	0.8	V
VGT	Gate trigger voltage	T2(-), G(+) VD=12V RL=100	0.8	V
IH	Holding current	VD=12V,IGT=100mA	30	mA
(dV/dt)c	Critical-rate of rise of commutation voltage	VDM=67%VDRM Gate open Tj =125C	20	V/s
tgt	Turn-on time	ITM =16A ,VDM=VDRM(MA) IG =0.1A,dlG/dt=5A/uS	2	s
(dl/dt)c	Critical-rate of rise of commutation current	VDM=400V, Tj =125C (dl/dt)c=5.4A/ms Gate open	5.4	A/ms