Low noise figure silicon bipolar RF transistor Infineon BFP196WH6327 for broadband amplifier and telecom
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Product Description
Product Overview
The BFP196W is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable as a power amplifier for DECT and PCN systems. This transistor offers a transition frequency (fT) of 7.5 GHz and a minimum noise figure (NFmin) of 1.3 dB at 900 MHz. It is available in a Pb-free (RoHS compliant) and halogen-free package with visible leads, and a qualification report according to AEC-Q101 is available. This is an ESD sensitive device, and handling precautions should be observed.
Product Attributes
- Brand: Infineon Technologies
- Type Marking: BFP196W
- Package: SOT343
- Certifications: Pb-free (RoHS compliant), Halogen-free, AEC-Q101 qualification report available
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 12 | V | |
| Collector-emitter voltage | VCES | 20 | V | |
| Collector-base voltage | VCBO | 20 | V | |
| Emitter-base voltage | VEBO | 2 | V | |
| Collector current | IC | 150 | mA | |
| Base current | IB | 15 | mA | |
| Total power dissipation | Ptot | 700 | mW | TS 69C |
| Junction temperature | TJ | 150 | C | |
| Ambient temperature | TA | -65 ... 150 | C | |
| Storage temperature | TStg | -65 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point | RthJS | 115 | K/W | TS is measured on the collector lead at the soldering point to the pcb |
| Electrical Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 |
| Collector-emitter cutoff current | ICES | 100 | A | VCE = 20 V, VBE = 0 |
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 1 | A | VEB = 1 V, IC = 0 |
| DC current gain | hFE | 70 - 140 | - | IC = 50 mA, VCE = 8 V, pulse measured |
| Transition frequency | fT | 5 - 7.5 | GHz | IC = 70 mA, VCE = 8 V, f = 500 MHz |
| Collector-base capacitance | Ccb | 0.86 - 1.3 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded |
| Collector emitter capacitance | Cce | 0.4 | pF | VCE = 10 V, f = 1 MHz, VBE = 0, base grounded |
| Emitter-base capacitance | Ceb | 3.9 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded |
| Minimum noise figure | NFmin | 1.3 - 2.3 | dB | IC = 20 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz |
| Power gain, maximum available | Gma | 19 - 12.5 | - | IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz / 1.8 GHz |
| Transducer gain | |S21e| | 13 - 7 | - | IC = 50 mA, VCE = 8 V, ZS = ZL = 50, f = 900 MHz / 1.8 GHz |
| Third order intercept point at output | IP3 | 32 | dBm | IC = 50 mA, VCE = 8 V, ZS = ZL = 50 , f = 0.9 GHz |
| 1dB Compression point at output | P-1dB | 19 | dBm | IC = 50 mA, VCE = 8 V, ZS = ZL = 50 , f = 0.9 GHz |
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