China wireless communication transistor Infineon BFR 460L3 E6327 designed for enhanced RF link budget and signal for sale

wireless communication transistor Infineon BFR 460L3 E6327 designed for enhanced RF link budget and signal

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Product Description

Infineon RF Transistors

Infineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. They are designed to enhance system sensitivity, improve interference immunity, and provide stable signal reception and transmission across multiple bands. These transistors are crucial for enabling universal network availability and connectivity in an increasingly mobile society, supporting the tremendous increase in data traffic and the growing number of connected devices.

Product Attributes

Brand: Infineon
Origin: Silicon-germanium (SiGe) based on B9 technology
Material: Silicon-germanium:carbide (SiGe:C)

Technical Specifications

Generation	fT (max)	NFmin (application)	Key Features	Advantages	Application Scenarios
7th Gen. (B7HF)	44 GHz	0.6 dB	High transition frequency, high gain, high linearity, broad frequency range (450 MHz to 12 GHz), reduced power consumption, 1.5 kV HBM ESD robustness.	Ease of use, improved system sensitivity, increased RF link budget and Signal-to-Noise Ratio (SNR), energy savings, extended battery life, improved high input power robustness.	Single- and dual-band Low-Noise Amplifier (LNA) for WiFi connectivity, AP routers, mobile stations, gain block for buffer or driver amplifiers, mixer or VCO for frequencies higher than 10 GHz.
8th Gen. (B9HF)	80 GHz	0.5 dB	Best-in-class NF and Gmax, dedicated device geometry reducing parasitic capacitance.	Improved system sensitivity, enhanced interference immunity, wider coverage areas, suitable for higher order modulation schemes (e.g., 256 QAM).	High-performance WiFi connectivity, dual- and fixed-frequency Low-Noise Amplifier (LNA) solutions, WiFi architectures with 4x4 MIMO or 8x8 MIMO functions.