switching component HXY MOSFET Z0107NN5AA4-HXY thyristor with 2 amp second fusing current and strong EMI resistance

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Product Description

Product Overview

The Z0107NN5AA4 thyristor offers a high dv/dt rate and strong resistance to electromagnetic interference, making it ideal for applications such as residual current circuit breakers, straight hair appliances, and igniters.

Product Attributes

Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Material: Plastic-Encapsulate
Model: Z0107NN5AA4

Technical Specifications

Symbol	Parameter	Conditions	Value	Unit
Absolute Maximum Ratings
VDRM /VRRM	repetitive peak off-state voltage		800	V
IT(RMS)	RMS on-state current		1.0	A
ITSM	Non repetitive surge peak on-state current	t =20ms Tj =25C	8	A
I2t	for fusing	t =16.7ms Tj =25C	2	A s
(dl/dt)c	Critical-rate of rise of commutation current	IG=2IGT t 100ns	100	A/ us
PG(AV)	Average Gate Power Dissipation		0.4	W
Tj	Junction Temperature		125	C
Tstg	Storage Temperature		-40 ~ 150	C
Electrical Characteristics
IDRM,IRRM	Repetitive Peak Off-State Current, Repetitive Peak Reverse Current	VDRM=VRRM Tj =125C	50	mA
IDRM,IRRM	Repetitive Peak Off-State Current, Repetitive Peak Reverse Current	VDRM=VRRM Tj =25C	1	mA
VDRM/VRRM	repetitive peak off-state voltage		800	V
IGT	Gate trigger current	VD=12V,RL=100 T =125 j C	0.8	mA
VGT	Gate trigger voltage	VD=12V,RL=100 T =125 j C	0.8	V
IH	Holding current	VD=12V,IGT=100mA T =125 j C	30	mA
VTM	On-state voltage	IT=1A,tp=380s T =125 j C	1.65	V
dV/dt	Critical-rate of rise of commutation voltage	Gate open VDM=400V, Tj =125C (dl/dt)c=5.4A/ms	20	V/us
tgt	Turn-on time	ITM =16A ,VDM=VDRM(MA) IG =0.1A,dlG/dt=5A/uS	2	us