consumption RF bipolar transistor Infineon BFR843EL3E6327XTSA1 with high speed and noise performance

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The BFR843EL3 is a low noise, dual-band, pre-matched RF bipolar transistor designed for high-speed and low-power consumption applications. It offers a unique combination of high-end RF performance and robustness, including high input power handling and ESD hardness. Its high transition frequency enables excellent noise performance across various frequencies. This transistor is suitable for low voltage applications and is qualified for industrial applications.

Product Attributes

Brand: Infineon
Product Name: BFR843EL3
Ordering Code: BFR843EL3E6327XTSA1
Package: TSLP-3-10
Marking: T2
Pieces per Reel: 15000
Certifications: Qualified for industrial applications according to JEDEC47/20/22

Technical Specifications

Parameter	Symbol	Values	Unit	Note or test condition
Collector emitter breakdown voltage	V(BR)CEO	2.25 - 2.6	V	IC = 1 mA, IB = 0, open base
Collector emitter leakage current	ICES	- 400	nA	VCE = 1.5 V, VBE = 0, E-B short circuited
Collector base leakage current	ICBO	- 400	nA	VCB = 1.5 V, IE = 0, open emitter
Emitter base leakage current	IEBO	- 10	A	VEB = 0.5 V, IC = 0, open collector
DC current gain	hFE	230 - 360 (IC=1mA), 260 - 580 (IC=15mA)	-	VCE = 1.8 V, Pulse measured
Collector base capacitance	CCB	0.07 - 5.26	pF	f = 1 MHz / 1 GHz, VCB = 1.8 V, VBE = 0, emitter grounded
Collector emitter capacitance	CCE	0.42	pF	f = 1 MHz, VCE = 1.8 V, VBE = 0, base grounded
Emitter base capacitance	CEB	0.66	pF	f = 1 MHz, VEB = 0.4 V, VCB = 0, collector grounded
Maximum power gain (450 MHz)	Gms	24.5 - 25.5	dB	VCE = 1.8 V, IC = 15 mA
Minimum noise figure (450 MHz)	NFmin	0.95	dB	VCE = 1.8 V, IC = 8 mA
3rd order intercept point at output (450 MHz)	OIP3	23	dBm	ZS = ZL = 50 , IC = 15 mA
Maximum power gain (2.4 GHz)	Gms	22 - 24	dB	VCE = 1.8 V, IC = 15 mA
Minimum noise figure (2.4 GHz)	NFmin	1 - 20	dB	VCE = 1.8 V, IC = 8 mA
3rd order intercept point at output (2.4 GHz)	OIP3	20.5	dBm	ZS = ZL = 50 , IC = 15 mA
Maximum power gain (5.5 GHz)	Gms	21.5 - 23	dB	VCE = 1.8 V, IC = 15 mA
Minimum noise figure (5.5 GHz)	NFmin	1.15 - 21.5	dB	VCE = 1.8 V, IC = 8 mA
3rd order intercept point at output (5.5 GHz)	OIP3	20.5	dBm	ZS = ZL = 50 , IC = 15 mA