bidirectional switching device HXY MOSFET MAC97A6 with 600 volt blocking voltage and 0.8 amp RMS current

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Product Description

Product Overview

The MAC97A6 is a plastic-encapsulate thyristor from HUAXUANYANG ELECTRONICS. Designed for general-purpose bidirectional switching, it offers blocking voltages up to 600 V and an RMS on-state current of 0.8 A. This device is suitable for various electronic applications requiring reliable switching capabilities.

Product Attributes

Brand: HUAXUANYANG ELECTRONICS
Origin: Shenzhen, China
Product ID: MAC97A6
Package: SOT-23
Marking: MAC97A6
Packing Method: Tape & Reel

Technical Specifications

Parameter	Value	Unit	Conditions
VDRM /VRRM (Repetitive peak off-state voltage)	600	V
IT(RMS) (RMS on-state current)	0.8	A
IGM (Peak Gate Current)	-	A
VGM (Peak gate voltage)	-	V
PGM (Peak gate power)	0.3	W
Tj (Junction Temperature)	-40 ~ 125	C
G(AV) (Average Gate Power Dissipation)	-	W
ITSM (Non repetitive surge peak on-state current)	8	A	t =20ms Tj =25C
It (It for fusing)	2	As	t =16.7ms Tj =25C
dl/dt (Critical-rate of rise of commutation current)	50	A/us	IG=2IGT tr100ns F=120Hz
dV/dt (Critical-rate of rise of commutation voltage)	10	V/us	VD=12V ,IGT=100mA
Tstg (Storage Temperature)	-40 ~ 150	C
IDRM,IRRM (Repetitive Peak Off-State Current / Repetitive Peak Reverse Current)	0.8	mA	VDRM=VRRM T =25 j C
IDRM,IRRM (Repetitive Peak Off-State Current / Repetitive Peak Reverse Current)	5	mA	VDRM=VRRM T =125 j C
VGD (Gate non-trigger voltage)	0.2	V	VD= 1/2V DRM
VTM (On-state voltage)	1.65	V	IT=0.8A,tp=380us
IGT (Gate trigger current)	0.8	mA	T2(+), G(+) VD=12V RL=100
IGT (Gate trigger current)	0.8	mA	T2(+), G(-) VD=12V RL=100
IGT (Gate trigger current)	0.8	mA	T2(-), G(-) VD=12V RL=100
IGT (Gate trigger current)	0.8	mA	T2(-), G(+) VD=12V RL=100
VGT (Gate trigger voltage)	5	V	T2(+), G(+) VD=12V RL=100
VGT (Gate trigger voltage)	5	V	T2(+), G(-) VD=12V RL=100
VGT (Gate trigger voltage)	5	V	T2(-), G(-) VD=12V RL=100
VGT (Gate trigger voltage)	5	V	T2(-), G(+) VD=12V RL=100
IH (Holding current)	30	mA
(dl/dt)c (Critical-rate of rise of commutation current)	5.4	A/ms
(dV/dt)c (Rate of change of commutating voltage)	20	V/us	VDM=67%V T =125 j C DM
tgt (Turn-on time)	2	us	ITM =16A ,VDM=V DRM V =400V jT =125 C DRM(MAX) IG =0.1A,dl /dt=5A/uS