Industrial grade RF transistor Infineon BFP 740ESD H6327 featuring SiGe C technology and 2 kV ESD robustness
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Product Description
Product Overview
The BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) featuring integrated ESD protection. It offers a unique combination of high-end RF performance and robustness, including a maximum RF input power of 21 dBm and 2 kV ESD robustness (HBM). This device is qualified for industrial applications and is suitable for a wide range of wireless communication, satellite communication, multimedia, and ISM applications.
Product Attributes
- Brand: Infineon
- Material: SiGe:C
- Certifications: Qualified for industrial applications according to JEDEC47/20/22
- ESD Sensitive: Yes
Technical Specifications
| Parameter | Symbol | Values | Unit | Note or test condition |
| Absolute Maximum Ratings | ||||
| Collector emitter voltage | VCEO | 4.2 | V | Open base, TA = 25 C |
| Collector base voltage | VCBO | 4.9 | V | Open emitter, TA = 25 C |
| Collector emitter voltage | VCES | 4.2 | V | E-B short circuited, TA = 25 C |
| Base current | IB | -10 to 5 | mA | |
| Collector current | IC | 45 | mA | |
| RF input power | PRFin | 21 | dBm | |
| ESD stress pulse | VESD | -2 to 2 | kV | HBM, all pins, acc. to JESD22-A114 |
| Total power dissipation | Ptot | 160 | mW | TS 98 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 to 150 | C | |
| Thermal Characteristics | ||||
| Junction - soldering point thermal resistance | RthJS | 325 | K/W | |
| DC Characteristics | ||||
| Collector emitter breakdown voltage | V(BR)CEO | 4.2 | V | IC = 1 mA, IB = 0, open base |
| Collector emitter leakage current | ICES | 400 | nA | VCE = 2 V, VBE = 0, E-B short circuited |
| Collector base leakage current | ICBO | 400 | nA | VCB = 2 V, IE = 0, open emitter |
| Emitter base leakage current | IEBO | 10 | A | VEB = 0.5 V, IC = 0, open collector |
| DC current gain | hFE | 160 to 400 | VCE = 3 V, IC = 25 mA, pulse measured | |
| General AC Characteristics | ||||
| Transition frequency | fT | 45 | GHz | VCE = 3 V, IC = 25 mA, f = 2 GHz |
| Collector base capacitance | CCB | 0.08 | pF | VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded |
| Collector emitter capacitance | CCE | 0.45 | pF | VCE = 3 V, VBE = 0, f = 1 MHz, base grounded |
| Emitter base capacitance | CEB | 0.55 | pF | VEB = 0.4 V, VCB = 0, f = 1 MHz, collector grounded |
| Frequency Dependent AC Characteristics (VCE = 3 V, ZS = ZL = 50 ) | ||||
| Parameter | Symbol | Values (Typ.) | Unit | Note or test condition |
| Power gain (f = 150 MHz) | Gms | 38.5 | dB | IC = 25 mA |
| Noise figure (f = 2.4 GHz) | NFmin | 0.65 | dB | IC = 6 mA |
| 3rd order intercept point at output (f = 5.5 GHz) | OIP3 | 22 | dBm | IC = 25 mA |
| Maximum RF input power | PRFin | 21 | dBm | |
| ESD robustness (HBM) | VESD | 2 | kV | |
| Minimum noise figure (f = 2.4 GHz) | NFmin | 0.65 | dB | 3 V, 6 mA |
| High gain (f = 2.4 GHz) | Gms | 25.5 | dB | 3 V, 25 mA |
| High gain (f = 5.5 GHz) | Gma | 18.5 | dB | 3 V, 25 mA |
| 3rd order intercept point at output (f = 5.5 GHz) | OIP3 | 22 | dBm | 3 V, 25 mA |
| Device Information | ||||
| Product name / Ordering code | BFP740ESD / BFP740ESDH6327XTSA1 | |||
| Package | SOT343 | |||
| Pin Configuration | 1 = B, 2 = E, 3 = C, 4 = E | |||
| Marking | T7s | |||
| Pieces / Reel | 3000 | |||
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Sellina