Low Voltage High Frequency Schottky Diode IDCHIP B5819W Designed for Inverter and Protection Circuit

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Product Description

Product Overview

The B5817W-B5819W series are Schottky barrier diodes designed for low voltage, high frequency applications. They are suitable for use in inverters, free-wheeling, and polarity protection circuits.

Product Attributes

Brand: SCHOTTKY BARRIER DIODE
Origin: (Shenzhen Indreamchip Electronics Technology Co., Ltd.)
Package: SOD-123

Technical Specifications

Model	Marking	Non-Repetitive Peak Reverse Voltage (VRM)	Peak Repetitive Peak Reverse Voltage (VRRM)	Working Peak Reverse Voltage (VRWM)	DC Blocking Voltage (VR)	RMS Reverse Voltage (VR(RMS))	Average Rectified Output Current (IO)	Peak Forward Surge Current (IFSM) @t=8.3ms	Repetitive Peak Forward Current (IFRM)	Power Dissipation (Pd)	Thermal Resistance Junction to Ambient (RJA)	Storage Temperature (TSTG)	Reverse Breakdown Voltage (V(BR)) @IR=1mA	Reverse Voltage Leakage Current (IR)	Forward Voltage (VF)	Diode Capacitance (CD) @VR=4V, f=1MHz
B5817W	SJ	20 V	20 V	20 V	20 V	14 V	1 A	9 A	1.5 A	500 mW	250 /W	-55~+150	20 V	1 mA @VR=20V	0.45 V @IF=1A, 0.75 V @IF=3A	120 pF
B5818W	SK	30 V	30 V	30 V	30 V	21 V	1 A	9 A	1.5 A	500 mW	250 /W	-55~+150	30 V	1 mA @VR=30V	0.55 V @IF=1A, 0.875 V @IF=3A	120 pF
B5819W	SL	40 V	40 V	40 V	40 V	28 V	1 A	9 A	1.5 A	500 mW	250 /W	-55~+150	40 V	1 mA @VR=40V	0.6 V @IF=1A, 0.9 V @IF=3A	120 pF