NPN Silicon Darlington Transistor Infineon BCV47E6327HTSA1 with SOT23 Package and High Current Gain

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Product Description

Product Overview

The BCV27 and BCV47 are NPN Silicon Darlington Transistors designed for general AF applications. They offer high collector current, high current gain, and are Pb-free (RoHS compliant) and qualified according to AEC Q101. Complementary PNP types are BCV26 and BCV46.

Product Attributes

Brand: Infineon Technologies
Material: Silicon
Certifications: AEC Q101
Package: SOT23
Type Marking: BCV27 (FFs), BCV47 (FGs)
RoHS Compliant: Yes

Technical Specifications

Parameter	Symbol	BCV27	BCV47	Unit
Maximum Ratings
Collector-emitter voltage	VCEO	30	60	V
Collector-base voltage	VCBO	40	80	V
Emitter-base voltage	VEBO	10		V
Collector current	IC	500		mA
Peak collector current, tp 10 ms	ICM	800		mA
Base current	IB	100		mA
Peak base current	IBM	200		mA
Total power dissipation - TS 74 C	Ptot	360		mW
Junction temperature	Tj	150		C
Storage temperature	Tstg	-65 ... 150		C
Thermal Resistance
Junction - soldering point	RthJS	210		K/W
DC Characteristics (at TA = 25C, unless otherwise specified)
Collector-emitter breakdown voltage (IC = 10 mA, IB = 0)	V(BR)CEO	30	60	V
Collector-base breakdown voltage (IC = 100 A, IE = 0)	V(BR)CBO	40	80	V
Emitter-base breakdown voltage (IE = 10 A, IC = 0)	V(BR)EBO	10		V
Collector-base cutoff current (VCB = 30 V, IE = 0)	ICBO	0.1	0.1	A
Collector-base cutoff current (VCB = 60 V, IE = 0)	ICBO	0.1	0.1	A
Collector-base cutoff current (VCB = 30 V, IE = 0, TA = 150 C)	ICBO	10	10	A
Collector-base cutoff current (VCB = 60 V, IE = 0, TA = 150 C)	ICBO	10	10	A
Emitter-base cutoff current (VEB = 4 V, IC = 0)	IEBO	100		nA
DC current gain (IC = 100 A, VCE = 1 V)	hFE	4000	2000	-
DC current gain (IC = 10 mA, VCE = 5 V)	hFE	10000	4000	-
DC current gain (IC = 100 mA, VCE = 5 V)	hFE	20000	10000	-
DC current gain (IC = 0.5 A, VCE = 5 V)	hFE	4000	2000	-
Collector-emitter saturation voltage (IC = 100 mA, IB = 0.1 mA)	VCEsat	1		V
Base emitter saturation voltage (IC = 100 mA, IB = 0.1 mA)	VBEsat	1.5		V
AC Characteristics (at TA = 25C, unless otherwise specified)
Transition frequency (IC = 50 mA, VCE = 5 V, f = 100 MHz)	fT	170		MHz
Collector-base capacitance (VCB = 10 V, f = 1 MHz)	Ccb	3		pF