Silicon PNP Transistor Array Infineon BC856S E6433 with Low Saturation Voltage and High Current Gain

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Product Description

Product Overview

The BC856S/U and BC857S are PNP Silicon AF Transistor Arrays designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internally isolated transistors with good matching in a single package. These devices are Pb-free (RoHS compliant) and qualified according to AEC Q101.

Product Attributes

Brand: Infineon Technologies
Material: Silicon
Certifications: AEC Q101, Pb-free (RoHS compliant)
Package Types: SOT363, SC74

Technical Specifications

Type	Marking	Package	VCEO (V)	VCBO (V)	VEBO (V)	IC (mA)	ICM (mA)	Ptot (mW) @ TS	Tj (C)	Tstg (C)	RthJS (K/W)	V(BR)CEO (V)	V(BR)CBO (V)	V(BR)EBO (V)	ICBO (A)	hFE	VCEsat (mV)	VBEsat (mV)	VBE(ON) (mV)	fT (MHz)	Ccb (pF)	Ceb (pF)	h11e (k)	h12e	h21e	h22e (S)	F (dB)
BC856S	3Ds	SOT363	65	80	5	100	200	250 @ 115 C	150	-65 to 150	140	65	80	5	0.015 (max) @ 45V	250-630 (typ)	75 (typ) @ 10mA, 250 (typ) @ 100mA	700 (typ) @ 10mA, 850 (typ) @ 100mA	600-820 (typ)	250 (typ) @ 100MHz	1.5 (typ)	8 (typ)	4.5 (typ)	2 (typ) x 10^-4	330 (typ)	30 (typ)	10 (max)
BC856U	3Ds	SOT363	65	80	5	100	200	250 @ 118 C	150	-65 to 150	130	65	80	5	0.015 (max) @ 45V	250-630 (typ)	75 (typ) @ 10mA, 250 (typ) @ 100mA	700 (typ) @ 10mA, 850 (typ) @ 100mA	600-820 (typ)	250 (typ) @ 100MHz	1.5 (typ)	8 (typ)	4.5 (typ)	2 (typ) x 10^-4	330 (typ)	30 (typ)	10 (max)
BC857S	3Cs	SOT363	45	50	5	100	200	250 @ 115 C	150	-65 to 150	140	45	50	5	5 (max) @ 150C	200-290 (typ)	75 (typ) @ 10mA, 250 (typ) @ 100mA	700 (typ) @ 10mA, 850 (typ) @ 100mA	600-820 (typ)	250 (typ) @ 100MHz	1.5 (typ)	8 (typ)	4.5 (typ)	2 (typ) x 10^-4	330 (typ)	30 (typ)	10 (max)