High gain broadband amplifier transistor Infineon BFR182E6327 silicon bipolar with low noise figure

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Product Description

Product Overview

The BFR182 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It is suitable for collector currents ranging from 1 mA to 20 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This component is Pb-free (RoHS compliant) and a qualification report according to AEC-Q101 is available. It is an ESD sensitive device and requires careful handling.

Product Attributes

Brand: Infineon Technologies
Package: SOT23
Certifications: AEC-Q101 (Qualification report available), RoHS compliant
Material: Silicon Bipolar

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Maximum Ratings
Collector-emitter voltage	VCEO	12	V
Collector-emitter voltage	VCES	20	V
Collector-base voltage	VCBO	20	V
Emitter-base voltage	VEBO	2	V
Collector current	IC	35	mA
Base current	IB	3	mA
Total power dissipation	Ptot	250	mW	TS 93 C
Junction temperature	TJ	150	C
Ambient temperature	TA	-65 ... 150	C
Storage temperature	TStg	-65 ... 150	C
Junction - soldering point Thermal Resistance	RthJS	230	K/W
DC Characteristics
Collector-emitter breakdown voltage	V(BR)CEO	12	V	IC = 1 mA, IB = 0
Collector-emitter cutoff current	ICES	100	A	VCE = 20 V, VBE = 0
Collector-base cutoff current	ICBO	100	nA	VCB = 10 V, IE = 0
Emitter-base cutoff current	IEBO	1	A	VEB = 1 V, IC = 0
DC current gain	hFE	70 - 140	-	IC = 10 mA, VCE = 8 V, pulse measured
AC Characteristics
Transition frequency	fT	6 - 8	GHz	IC = 15 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance	Ccb	0.32 - 0.5	pF	VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded
Collector emitter capacitance	Cce	0.2	pF	VCE = 10 V, f = 1 MHz, VBE = 0, base grounded
Emitter-base capacitance	Ceb	0.8	pF	VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded
Minimum noise figure	NFmin	0.9	dB	IC = 3 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz
Minimum noise figure	NFmin	1.3	dB	IC = 3 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz
Power gain, maximum available	Gma	18	-	IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz
Power gain, maximum available	Gma	12	-	IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz
Transducer gain	\|S21e\|	15	dB	IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz
Transducer gain	\|S21e\|	9.5	dB	IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz