Low noise broadband amplifier silicon bipolar RF transistor Infineon BFR93AE6327HTSA1 with high gain

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Product Description

Product Overview

The BFR93A is a low-noise silicon bipolar RF transistor designed for low-noise, high gain broadband amplifiers. It is suitable for collector currents ranging from 2 mA to 30 mA and is Pb-free (RoHS compliant). This device is ESD sensitive and requires careful handling.

Product Attributes

Brand: Infineon Technologies
Package: SOT23
Certifications: AEC-Q101 available
Compliance: Pb-free (RoHS compliant)

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Maximum Ratings
Collector-emitter voltage	VCEO	12	V
Collector-emitter voltage	VCES	20	V
Collector-base voltage	VCBO	20	V
Emitter-base voltage	VEBO	2	V
Collector current	IC	90	mA
Base current	IB	30	mA
Total power dissipation	Ptot	300	mW	TS 111 C
Junction temperature	TJ	150	C
Storage temperature	TStg	-55 ... 150	C
Thermal Resistance
Junction - soldering point	RthJS	130	K/W	TS is measured on the collector lead at the soldering point to the pcb
Electrical Characteristics
Collector-emitter breakdown voltage	V(BR)CEO	12	V	IC = 1 mA, IB = 0
Collector-emitter cutoff current	ICES	100	A	VCE = 20 V, VBE = 0
Collector-base cutoff current	ICBO	100	nA	VCB = 10 V, IE = 0
Emitter-base cutoff current	IEBO	10	A	VEB = 2.5 V, IC = 0
DC current gain	hFE	70 - 140	-	IC = 30 mA, VCE = 8 V, pulse measured
Transition frequency	fT	4.5 - 6	GHz	IC = 30 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance	Ccb	0.54 - 0.8	pF	VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded
Collector emitter capacitance	Cce	0.25	pF	VCE = 10 V, f = 1 MHz, VBE = 0, base grounded
Emitter-base capacitance	Ceb	1.9	pF	VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded
Minimum noise figure	NFmin	1.5 - 2.6	dB	IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz
Power gain, maximum available	Gma	14.5 - 9.5	dB	IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz / 1.8 GHz
Transducer gain	\|S21e\|	12.5 - 7	dB	IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz / 1.8 MHz
Third order intercept point at output	IP3	15	dBm	IC = 30mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz
1dB Compression point	P-1dB	6	dBm	IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz