Silicon bipolar RF transistor Infineon BFP 181 E7764 optimized for broadband low noise amplification

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Product Description

Product Overview

The BFP181 is a low-noise silicon bipolar RF transistor designed for low-noise, high-gain broadband amplifiers. It operates at collector currents from 0.5 mA to 12 mA and features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This Pb-free (RoHS compliant) component is available with qualification reports according to AEC-Q101 and is ESD sensitive, requiring careful handling.

Product Attributes

Brand: Infineon Technologies
Package: SOT143
Certifications: AEC-Q101
Compliance: Pb-free (RoHS compliant)

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Maximum Ratings	VCEO	12	V
	VCES	20	V
	VCBO	20	V
	VEBO	2	V
	IC	20	mA
Base current	IB	2	mA
Total power dissipation	Ptot	175	mW	TS 75 C
Junction temperature	TJ	150	C
Storage temperature	TStg	-55 ... 150	C
Thermal Resistance	RthJS	430	K/W	Junction - soldering point
DC Characteristics	V(BR)CEO	12	V	IC = 1 mA, IB = 0
	ICES	-	100	A	VCE = 20 V, VBE = 0
	ICBO	-	100	nA	VCB = 10 V, IE = 0
	IEBO	-	1	A	VEB = 1 V, IC = 0
	hFE	70	140	-	IC = 5 mA, VCE = 8 V, pulse measured
AC Characteristics	fT	6	8	GHz	IC = 10 mA, VCE = 8 V, f = 500 MHz
	Ccb	-	0.4	pF	VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded
	Cce	-	0.3	-	VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded
	Ceb	-	0.4	-	VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded
	NFmin	-	0.9	dB	IC = 2 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz
	Gms	-	21	dB	IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz
	\|S21e\|	-	17.5	-	IC = 5 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz