Silicon Bipolar RF Transistor Infineon BFR380FH6327 with Halogen Free Thin Small Flat Package Design
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Product Description
Product Overview
The BFR380F is a high-linearity, low-noise silicon bipolar RF transistor designed for driver amplifier applications. It offers an output compression point of 19.5 dBm at 1.8 GHz and a low noise figure of 1.1 dB at 1.8 GHz, making it ideal for oscillators up to 3.5 GHz. The collector design supports a 5 V supply voltage, and it is available in a Pb-free, halogen-free, thin small flat package with visible leads. Qualification reports according to AEC-Q101 are available. This device is ESD sensitive and requires careful handling.
Product Attributes
- Brand: Infineon Technologies
- Certifications: AEC-Q101 (Qualification report available), Pb-free (RoHS compliant), Halogen-free
- Package Type: TSFP-3
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes | |
| Maximum Ratings | |||||
| Collector-emitter voltage | VCEO | 6 | V | TA = 25 C, unless otherwise specified | |
| Collector-emitter voltage | VCES | 15 | V | TA = 25 C, unless otherwise specified | |
| Collector-base voltage | VCBO | 15 | V | TA = 25 C, unless otherwise specified | |
| Emitter-base voltage | VEBO | 2 | V | TA = 25 C, unless otherwise specified | |
| Collector current | IC | 80 | mA | TA = 25 C, unless otherwise specified | |
| Base current | IB | 14 | mA | TA = 25 C, unless otherwise specified | |
| Total power dissipation | Ptot | 380 | mW | TS 95C | |
| Junction temperature | TJ | 150 | C | TA = 25 C, unless otherwise specified | |
| Storage temperature | TStg | -55 ... 150 | C | TA = 25 C, unless otherwise specified | |
| Thermal Resistance | |||||
| Junction - soldering point | RthJS | 145 | K/W | TS is measured on the collector lead at the soldering point to the pcb | |
| DC Characteristics | |||||
| Collector-emitter breakdown voltage | V(BR)CEO | 6 | V | IC = 1 mA, IB = 0 | |
| Collector-emitter cutoff current | ICES | 1 | nA | VCE = 5 V, VBE = 0 | |
| Collector-emitter cutoff current | ICES | 30 | 1000 | nA | VCE = 15 V, VBE = 0 |
| Collector-base cutoff current | ICBO | 30 | nA | VCB = 5 V, IE = 0 | |
| Emitter-base cutoff current | IEBO | 1 | 500 | nA | VEB = 1 V, IC = 0 |
| DC current gain | hFE | 90 | 120 | 160 | IC = 40 mA, VCE = 3 V, pulse measured |
| AC Characteristics | |||||
| Transition frequency | fT | 11 | 14 | GHz | IC = 40 mA, VCE = 3 V, f = 1 GHz |
| Collector-base capacitance | Ccb | 0.5 | 0.7 | pF | VCB = 5 V, f = 1 MHz, VBE = 0, emitter grounded |
| Collector emitter capacitance | Cce | 0.2 | - | pF | VCE = 5 V, f = 1 MHz, VBE = 0, base grounded |
| Emitter-base capacitance | Ceb | 1 | - | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded |
| Minimum noise figure | NFmin | 1.1 | 1.6 | dB | IC = 8 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz |
| Minimum noise figure | NFmin | - | - | dB | IC = 8 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz |
| Power gain, maximum available | Gma | 13.5 | - | dB | IC = 40 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz |
| Power gain, maximum available | Gma | 9.5 | - | dB | IC = 40 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz |
| Transducer gain | |S21e| | 11 | - | dB | IC = 40 mA, VCE = 3 V, ZS = ZL = 50, f = 1.8 GHz |
| Transducer gain | |S21e| | 7 | - | dB | IC = 40 mA, VCE = 3 V, ZS = ZL = 50, f = 3 GHz |
| Third order intercept point at output | IP3 | 29 | - | dBm | VCE = 3 V, IC = 40 mA, ZS=ZL=50 , f = 1.8 GHz |
| 1dB compression point at output | P-1dB | 17 | 19.5 | dBm | IC = 40 mA, VCE = 3V, f = 1.8 GHz, ZS=ZL=50 |
| 1dB compression point at output | P-1dB | - | - | dBm | ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz |
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