Switching Circuit Transistor Array Infineon BCR08PNH6327XTSA1 with NPN PNP Silicon Digital Transistors

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Product Description

Product Overview

The BCR08PN is a NPN/PNP Silicon Digital Transistor Array designed for switching circuits, inverters, interface circuits, and driver circuits. It features two internally isolated NPN and PNP transistors within a single package, each with built-in bias resistors (R1=2.2 k, R2=47 k). This Pb-free (RoHS compliant) and AEC Q101 qualified component offers a compact solution for various electronic applications.

Product Attributes

Brand: Infineon Technologies
Package: SOT363
Certifications: AEC Q101, RoHS compliant
Material: Silicon

Technical Specifications

Parameter	Symbol	NPN/PNP Type (Typical)	Unit	NPN Type (Min/Typ/Max)
Maximum Ratings
Collector-emitter voltage	VCEO	50	V
Collector-base voltage	VCBO	50	V
Input forward voltage	Vi(fwd)	20	V
Input reverse voltage	Vi(rev)	5	V
DC collector current	IC	100	mA
Total power dissipation, TS = 115 C	Ptot	250	mW
Junction temperature	Tj	150	C
Storage temperature	Tstg	-65 ... 150	C
Thermal Resistance Junction - soldering point	RthJS	≤ 140	K/W
DC Characteristics
Collector-emitter breakdown voltage	V(BR)CEO	50	V	min.
Collector-base breakdown voltage	V(BR)CBO	50	V	min.
Collector cutoff current	ICBO	100	nA	max.
Emitter cutoff current	IEBO	164	µA	max.
DC current gain	hFE	70	-	min.
Collector-emitter saturation voltage	VCEsat	0.3	V	max.
Input off voltage	Vi(off)	0.4 / 0.8	V	min. / max.
Input on Voltage	Vi(on)	0.5 / 1.1	V	min. / max.
Input resistor	R1	2.2	kΩ	typ.
Resistor ratio R1/R2	R1/R2	0.047	-	typ.
AC Characteristics
Transition frequency	fT	170	MHz	typ.
Collector-base capacitance	Ccb	2	pF	typ.