Digital Transistor Infineon BCR 505 E6327 Featuring Built in Bias Resistors NPN Silicon for Circuit

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Product Description

Product Overview

The BCR505 is an NPN Silicon Digital Transistor featuring built-in bias resistors (R1= 2.2 k, R2= 10 k). It is Pb-free and RoHS compliant, qualified according to AEC Q101 standards. This transistor is designed for digital applications requiring integrated biasing.

Product Attributes

Brand: Infineon Technologies
Material: Silicon
Certifications: AEC Q101, RoHS compliant
Package: SOT23

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Maximum Ratings
Collector-emitter voltage	VCEO	50	V
Collector-base voltage	VCBO	50	V
Input forward voltage	Vi(fwd)	20	V
Input reverse voltage	Vi(rev)	5	V
Collector current	IC	500	mA
Total power dissipation	Ptot	330	mW	TS 79 C
Junction temperature	Tj	150	C
Storage temperature	Tstg	-65 ... 150	C
Thermal Resistance (Junction-soldering point)	RthJS	215	K/W	1) For calculation of RthJA please refer to Application Note AN077
DC Characteristics
Collector-emitter breakdown voltage	V(BR)CEO	50	V	IC = 100 A, IB = 0
Collector-base breakdown voltage	V(BR)CBO	50	V	IC = 10 A, IE = 0
Collector-base cutoff current	ICBO	-	100	nA	VCB = 50 V, IE = 0
Emitter-base cutoff current	IEBO	-	0.65	mA	VEB = 5 V, IC = 0
DC current gain	hFE	70	-	IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltage	VCEsat	-	0.3	V	IC = 50 mA, IB = 2.5 mA 1)
Input off voltage	Vi(off)	0.4	-	1	IC = 100 A, VCE = 5 V
Input on voltage	Vi(on)	0.5	-	1.4	IC = 10 mA, VCE = 0.3 V
Input resistor R1	R1	1.5	2.2	2.9	k
Resistor ratio R1/R2	R1/R2	0.19	0.22	0.24	-
AC Characteristics
Transition frequency	fT	-	100	MHz	IC = 50 mA, VCE = 5 V, f = 100 MHz