Surface mount silicon npn rf bipolar transistor Infineon BFP640H6327 with 42 GHz transition frequency

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The BFP640 is a surface mount, high linearity silicon NPN RF bipolar transistor utilizing SiGe:C technology. It is part of Infineons sixth generation transistor family, offering a transition frequency (fT) of 42 GHz. Its high linearity characteristics at low currents make it suitable for energy-efficient designs up to 8 GHz. This device provides cost competitiveness without compromising ease of use.

Product Attributes

Brand: Infineon
Material: SiGe:C technology
Certifications: Qualified for industrial applications according to JEDEC47/20/22

Technical Specifications

Parameter	Symbol	Values	Unit	Note or test condition
Minimum noise figure	NFmin	0.65	dB	at 1.9 GHz, 3 V, 6 mA
High gain	Gma	24	dB	at 1.9 GHz, 3 V, 25 mA
3rd order intercept point at output	OIP3	26.5	dBm	at 1.9 GHz, 3 V, 25 mA
Transition frequency	fT	42	GHz	VCE = 3 V, IC = 30 mA, f = 2 GHz
Collector base capacitance	CCB	0.08	pF	VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded
Collector emitter capacitance	CCE	0.24	pF	VCE = 3 V, VBE = 0, f = 1 MHz, base grounded
Emitter base capacitance	CEB	0.51	pF	VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded
Collector emitter breakdown voltage	V(BR)CEO	4.1	V	IC = 1 mA, IB = 0, open base
Collector emitter leakage current	ICES	1	nA	VCE = 13 V, VBE = 0, E-B short circuited
Collector base leakage current	ICBO	1	nA	VCB = 5 V, IE = 0, open emitter
Emitter base leakage current	IEBO	1	nA	VEB = 0.5 V, IC = 0, open collector
DC current gain	hFE	110		VCE = 3 V, IC = 30 mA, pulse measured