Low noise silicon bipolar RF transistor Infineon BFP410H6327 suitable for high frequency applications

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Product Description

Product Overview

The BFP410 is a low-noise silicon bipolar RF transistor designed for high-frequency applications. It is suitable for handheld devices, high-frequency oscillators such as DROs for LNBs, and ISM band applications including Automatic Meter Reading and Sensors. This device features a high transit frequency of 25 GHz and is available in a Pb-free and halogen-free package with visible leads. A qualification report according to AEC-Q101 is available. Handle with care as it is an ESD-sensitive device.

Product Attributes

Brand: Infineon Technologies
Material: Silicon Bipolar
Certifications: Pb-free (RoHS compliant), halogen-free, AEC-Q101
Package: SOT343

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-emitter voltage	VCEO	4.5	V	TA = 25 C
Collector-emitter voltage	VCEO	4.1	V	TA = -55 C
Collector-emitter voltage	VCES	13	V
Collector-base voltage	VCBO	13	V
Emitter-base voltage	VEBO	1.5	V
Collector current	IC	40	mA
Base current	IB	6	mA
Total power dissipation	Ptot	150	mW	TS 100 C
Junction temperature	TJ	150	C
Storage temperature	TStg	-55 ... 150	C
Junction - soldering point thermal resistance	RthJS	335	K/W
Collector-emitter breakdown voltage	V(BR)CEO	4.5	V	IC = 1 mA, IB = 0
Collector-emitter cutoff current	ICES	1	nA	VCE = 2 V, VBE = 0
Collector-emitter cutoff current	ICES	30	nA	VCE = 5 V, VBE = 0 , TA = 85 C
Collector-base cutoff current	ICBO	1	nA	VCB = 2 V, IE = 0
Collector-base cutoff current	ICBO	30	nA	VCB = 2 V, IE = 0
Emitter-base cutoff current	IEBO	0.001	A	VEB = 0.5 V, IC = 0
Emitter-base cutoff current	IEBO	0.6	A	VEB = 0.5 V, IC = 0
DC current gain	hFE	60	-	IC = 13 mA, VCE = 2 V, pulse measured
DC current gain	hFE	95	-	IC = 13 mA, VCE = 2 V, pulse measured
DC current gain	hFE	130	-	IC = 13 mA, VCE = 2 V, pulse measured
Transition frequency	fT	18	GHz	IC = 20 mA, VCE = 2 V, f = 2 GHz
Transition frequency	fT	25	GHz	IC = 20 mA, VCE = 2 V, f = 2 GHz
Collector-base capacitance	Ccb	0.09	pF	VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded
Collector-base capacitance	Ccb	0.17	pF	VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded
Collector emitter capacitance	Cce	0.35	pF	VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded
Emitter-base capacitance	Ceb	0.45	pF	VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded
Minimum noise figure	NFmin	1.2	dB	IC = 2 mA, VCE = 2 V, f = 2 GHz, ZS = ZSopt
Power gain, maximum stable	Gms	21.5	dB	IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 2 GHz
Insertion power gain	\|S21\|	18.5	dB	VCE = 2 V, IC = 20 mA, f = 2 GHz, ZS = ZL = 50
Third order intercept point at output	IP3	23.5	dBm	VCE = 2 V, IC = 20 mA, f = 2 GHz, ZS = ZL = 50
1dB compression point at output	P-1dB	10.5	dBm	IC = 20 mA, VCE = 2 V, ZS = ZL = 50 , f = 2 GHz