China wireless communication solutions featuring Infineon BFR 380L3 E6327 RF transistor for mobile systems for sale

wireless communication solutions featuring Infineon BFR 380L3 E6327 RF transistor for mobile systems

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Product Description

Infineon RF Transistors

Infineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. Designed for increasing data traffic and connectivity demands in mobile systems and infrastructure, these transistors provide superior performance, versatility, and supply security. They are crucial for enabling stable and reliable wireless reception and transmission across multiple bands, supporting applications like small cells, automotive infotainment, and navigation.

Product Attributes

Brand: Infineon
Material: Silicon-germanium (SiGe) based on B9 technology
Origin: In-house process builds

Technical Specifications

Generation	Key Features	Technical Benefits	Customer Benefits	fT (max)	NFmin (dB)	Frequency Range	Gmax (dB)
7th Generation	High transition frequency, high gain, high linearity, high maximum RF input power, 1.5 kV HBM ESD robustness, reduced power consumption	Improved system sensitivity, enhanced interference immunity, wider coverage areas, higher order modulation support, increased RF link budget and SNR, energy savings, extended battery life, improved high input power robustness	Easy-to-use discrete Heterojunction Bipolar Transistors (HBT) for single- and dual-band Low-Noise Amplifier (LNA) solutions in WiFi connectivity. Suitable as gain block for buffer/driver amplifiers, mixer, or VCO for frequencies > 10 GHz.	44 GHz	0.45 dB (sub-GHz), 0.9 dB (5.5 GHz)	450 MHz to 12 GHz	19 dB (at 10 GHz)
8th Generation	Best-in-class performance, optimized device geometry, improved BiC in relation to NF and power gain Gmax	Increased RF link budget and Signal-to-Noise Ratio (SNR), improved system sensitivity, interference immunity enhancement, superior linearity compared to market solutions.	High-performance discrete Heterojunction Bipolar Transistors (HBT) for dual- and fixed-frequency Low-Noise Amplifier (LNA) solutions in high-performance WiFi connectivity. Enables higher order modulation schemes for very high throughput wireless specifications.	80 GHz	0.5 dB (best in class)	Not specified, but implied for high-frequency WiFi applications	Not specified, but implied to be highest