Low noise silicon NPN RF bipolar transistor Infineon BFR340FH6327XTSA1 designed for oscillator applications up to 35 GHz
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Product Description
Product Overview
The BFR340F is a low noise, silicon NPN RF bipolar transistor from Infineon's third-generation RF bipolar transistor family. It is designed for oscillator applications up to 3.5 GHz, offering low current and high breakdown voltage characteristics. This device provides a cost-competitive solution without compromising ease of use.
Product Attributes
- Brand: Infineon
- Material: Silicon
- Certifications: Qualified for industrial applications according to JEDEC47/20/22
- Sensitivity: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Technical Specifications
| Parameter | Symbol | Values | Unit | Note or test condition |
| Absolute Maximum Ratings | VCEO | 6 | V | Open base |
| VCES | 15 | V | E-B short circuited | |
| VCBO | 15 | V | Open emitter | |
| VEBO | 2 | V | Open collector | |
| IB | 2 | mA | ||
| IC | 20 | mA | ||
| Ptot | 75 | mW | TS 110 C | |
| TJ | 150 | C | ||
| Thermal Characteristics | RthJS | 530 | K/W | Junction - soldering point |
| Ptot | See Figure 1 | mW | Total power dissipation = f(TS) | |
| DC Characteristics | V(BR)CEO | 6 9 | V | IC = 1 mA, IB = 0, open base |
| ICES | 1 302) | nA | VCE = 4 V, VBE = 0, E-B short circuited | |
| ICBO | 1 302) | nA | VCB = 4 V, IE = 0, open emitter | |
| IEBO | 1 5002) | nA | VEB = 1 V, IC = 0, open collector | |
| hFE | 90 160 | VCE = 3 V, IC = 5 mA, pulse measured | ||
| General AC Characteristics | fT | 11 14 | GHz | VCE = 3 V, IC = 6 mA, f = 1 GHz |
| CCB | 0.21 0.4 | pF | VCB = 5 V, VBE = 0, f = 1 MHz, emitter grounded | |
| CCE | 0.17 | pF | VCE = 5 V, VBE = 0, f = 1 MHz, base grounded | |
| Frequency Dependent AC Characteristics (f=100 MHz) | Gms | 19 | dB | IC = 3 mA, VCE = 1.5 V |
| NFmin | 0.9 | dB | IC = 3 mA, VCE = 1.5 V | |
| Frequency Dependent AC Characteristics (f=1.8 GHz) | Gms | 16.5 | dB | IC = 5 mA, VCE = 3 V |
| OIP3 | 13 | dBm | IC = 5 mA, ZS = ZL = 50 | |
| Frequency Dependent AC Characteristics (f=1.9 GHz) | NFmin | 1 | dB | IC = 1 mA, VCE = 1.5 V |
| Gms | 16.3 | dB | IC = 5 mA, VCE = 3 V | |
| Frequency Dependent AC Characteristics (f=2.4 GHz) | NFmin | 1.2 | dB | IC = 1 mA, VCE = 1.5 V |
| Gms | 14.9 | dB | IC = 5 mA, VCE = 3 V | |
| Frequency Dependent AC Characteristics (f=3 GHz) | Gms | 13 | dB | IC = 5 mA, VCE = 3 V |
| NFmin | 1.5 | dB | IC = 1 mA, VCE = 1.5 V |
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