Pb-free silicon tuning diode Infineon BBY5802VH6327XTSA1 designed for TCXO and VCXO frequency control
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Delivery Time:
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Product Description
Product Overview
The BBY58 series are silicon hyperabrupt tuning diodes designed for low tuning voltage operation in VCOs for mobile communications equipment and low frequency control elements like TCXOs and VCXOs. These diodes offer excellent linearity, high Q, and low series resistance. They are available in various packages and configurations, featuring very low capacitance spread and Pb-free (RoHS compliant) packaging, qualified according to AEC Q101.
Product Attributes
- Brand: Infineon
- Material: Silicon
- Compliance: Pb-free (RoHS compliant)
- Qualification: AEC Q101
Technical Specifications
| Model | Type | Package | Configuration | LS (nH) | Marking |
|---|---|---|---|---|---|
| BBY58-02L | Tuning Diode | TSLP-2-1 | single, leadless | 0.4 | yel. B5s |
| BBY58-02V | Tuning Diode | SC79 | single | 0.6 | 88 |
| BBY58-02W | Tuning Diode | SCD80 | single | 0.6 | 8 |
| BBY58-03W | Tuning Diode | SOD323 | single | 0.6 | 88 |
| BBY58-05W | Tuning Diode | SOT323 | common anode | 1.4 | 8 |
| BBY58-06W | Tuning Diode | SOT323 | common cathode | 1.4 | y |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Diode reverse voltage | VR | 10 | V |
| Forward current | IF | 20 | mA |
| Operating temperature range | Top | -55 ... 150 | C |
| Storage temperature | Tstg | -55 ... 150 | C |
| Reverse current (VR = 8 V) | IR | - | nA |
| Reverse current (VR = 8 V, TA = 85 C) | IR | 10 | nA |
| Diode capacitance (VR = 1 V, f = 1 MHz) | CT | 17.5 - 19.3 | pF |
| Diode capacitance (VR = 2 V, f = 1 MHz) | CT | 11.4 - 13.3 | pF |
| Diode capacitance (VR = 3 V, f = 1 MHz) | CT | 7.8 - 9.3 | pF |
| Diode capacitance (VR = 4 V, f = 1 MHz) | CT | 5.5 - 6.6 | pF |
| Diode capacitance (VR = 6 V, f = 1 MHz) | CT | 3.8 - 5.5 | pF |
| Capacitance ratio (VR = 1 V, VR = 3 V, f = 1 MHz) | CT1/CT3 | 1.9 - 2.4 | - |
| Capacitance ratio (VR = 1 V, VR = 4 V, f = 1 MHz) | CT1/CT4 | 2.7 - 3.5 | - |
| Capacitance ratio (VR = 4 V, VR = 6 V, f = 1 MHz) | CT4/CT6 | 1.15 - 1.45 | - |
| Series resistance (VR = 1 V, f = 470 MHz, BBY58-02L, -07L4) | rS | 0.3 | |
| Series resistance (VR = 1 V, f = 470 MHz, all other) | rS | 0.25 |
| Parameter | Symbol | Value (min) | Value (typ) | Value (max) | Unit |
|---|---|---|---|---|---|
| Diode capacitance (VR = 1 V, f = 1 MHz) | CT | 17.5 | 18.3 | 19.3 | pF |
| Diode capacitance (VR = 2 V, f = 1 MHz) | CT | 11.4 | 12.35 | 13.3 | pF |
| Diode capacitance (VR = 3 V, f = 1 MHz) | CT | 7.8 | 8.6 | 9.3 | pF |
| Diode capacitance (VR = 4 V, f = 1 MHz) | CT | 5.5 | 6 | 6.6 | pF |
| Diode capacitance (VR = 6 V, f = 1 MHz) | CT | 3.8 | 4.7 | 5.5 | pF |
| Capacitance ratio (VR = 1 V, VR = 3 V, f = 1 MHz) | CT1/CT3 | 1.9 | 2.15 | 2.4 | - |
| Capacitance ratio (VR = 1 V, VR = 4 V, f = 1 MHz) | CT1/CT4 | 2.7 | 3.05 | 3.5 | - |
| Capacitance ratio (VR = 4 V, VR = 6 V, f = 1 MHz) | CT4/CT6 | 1.15 | 1.3 | 1.45 | - |
| Series resistance (VR = 1 V, f = 470 MHz) | rS | - | - | 0.25 |
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