Silicon Germanium Bipolar RF Transistor Infineon BFP650FH6327 Suitable for High Frequency RF Circuits

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Product Description

BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor

The BFP640FESD is a robust, low-noise silicon germanium bipolar RF transistor designed for various RF applications. It offers excellent performance characteristics suitable for demanding RF circuitry.

Product Attributes

Brand: Infineon Technologies
Material: Silicon Germanium (SiGe)
Origin: Germany (Implied by publisher location)

Technical Specifications

Parameter	Value	Conditions	Unit
Maximum Ratings
Collector-Emitter Voltage	20		V
Collector-Base Voltage	20		V
Emitter-Base Voltage	5		V
Collector Current	100		mA
Total Power Dissipation	1.2	Tamb = 25C	W
Storage Temperature	-65 to 150		C
Thermal Characteristics
Thermal Resistance Junction to Ambient	104	(calculated)	K/W
Thermal Resistance Junction to Case	40	(calculated)	K/W
Electrical Characteristics (Typical, unless otherwise specified)
Collector-Emitter Breakdown Voltage	20	IC = 1 mA, IB = 0	V
Collector-Emitter Breakdown Voltage	20	IB = 10 A, IE = 0	V
Emitter-Base Breakdown Voltage	5	IE = 1 mA, IC = 0	V
Collector Cut-off Current	0.01	VCE = 20 V, VBE = 0	A
Emitter Cut-off Current	0.01	VEB = 5 V, VCE = 0	A
DC Current Gain (hFE)	100	VCE = 3 V, IC = 30 mA
Transition Frequency (fT)	65	VCE = 3 V, IC = 30 mA, f = 1 GHz	GHz
Collector-Base Capacitance (CCB)	0.6	VCB = 10 V, f = 1 MHz	pF
Noise Figure (NFmin)	0.6	VCE = 3 V, IC = 6 mA, f = 1 GHz	dB
Noise Figure (NFmin)	1.0	VCE = 3 V, IC = 30 mA, f = 1 GHz	dB
Noise Figure (NF50)	1.0	VCE = 3 V, IC = 6 mA, f = 1 GHz, ZS = 50	dB
Noise Figure (NF50)	1.5	VCE = 3 V, IC = 30 mA, f = 1 GHz, ZS = 50	dB
3rd Order Intercept Point (OIP3)	38	ZS = ZL = 50 , VCE = 3 V, IC = 30 mA, f = 1 GHz	dBm