General purpose NPN transistor Infineon MMBTA 06 LT1 with environmentally friendly Pb free packaging

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Product Description

Product Overview

The MMBTA05LT1 and MMBTA06LT1 are NPN silicon driver transistors designed for general-purpose applications. They are available in Pb-Free packages, offering an environmentally conscious choice. These devices are suitable for various driving applications where reliable NPN transistor performance is required.

Product Attributes

Brand: onsemi (Semiconductor Components Industries, LLC)
Certifications: PbFree Packages Available

Technical Specifications

Characteristic	Symbol	MMBTA05LT1	MMBTA06LT1	Unit	Notes
CollectorEmitter Voltage	VCEO	60	80	Vdc
CollectorBase Voltage	VCBO	60	80	Vdc
EmitterBase Voltage	VEBO	4.0		Vdc
Collector Current - Continuous	IC	500		mAdc
Total Device Dissipation (FR-5 Board)	PD	225		mW	TA = 25C, Derate above 25C 1.8 mW/C
Thermal Resistance, Junction-to-Ambient (FR-5 Board)	RJA	556		C/W
Total Device Dissipation (Alumina Substrate)	PD	300		mW	TA = 25C, Derate above 25C 2.4 mW/C
Thermal Resistance, Junction-to-Ambient (Alumina Substrate)	RJA	417		C/W	99.5% alumina
Junction and Storage Temperature	TJ, Tstg	-55 to +150		C
CollectorEmitter Breakdown Voltage	V(BR)CEO	60	80	Vdc	IC = 1.0 mAdc, IB = 0
EmitterBase Breakdown Voltage	V(BR)EBO	4.0		Vdc	IE = 100 Adc, IC = 0
Collector Cutoff Current	ICES	-	0.1	Adc	VCE = 60 Vdc, IB = 0
Collector Cutoff Current	ICBO	-	0.1	Adc	MMBTA05 (VCB = 60 Vdc, IE = 0); MMBTA06 (VCB = 80 Vdc, IE = 0)
DC Current Gain	hFE	100	100	-	IC = 10 mAdc, VCE = 1.0 Vdc; IC = 100 mAdc, VCE = 1.0 Vdc
CollectorEmitter Saturation Voltage	VCE(sat)	-	0.25	Vdc	IC = 100 mAdc, IB = 10 mAdc
BaseEmitter On Voltage	VBE(on)	-	1.2	Vdc	IC = 100 mAdc, VCE = 1.0 Vdc
CurrentGain Bandwidth Product	fT	100		MHz	IC = 10 mA, VCE = 2.0 V, f = 100 MHz