Silicon bipolar RF transistor Infineon BFP 193 E6327 featuring AEC Q101 qualification for broadband amplifier

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Product Description

Product Overview

The BFP193 is a low-noise silicon bipolar RF transistor designed for high-gain and linear broadband amplifiers up to 2 GHz. It offers excellent performance with a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This component is Pb-free and RoHS compliant, with qualification reports available according to AEC-Q101. It is ESD sensitive and requires careful handling.

Product Attributes

Brand: Infineon Technologies
Package: SOT143
Certifications: AEC-Q101 (Qualification report available)
Compliance: Pb-free (RoHS compliant)

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Maximum Ratings	VCEO	12	V
	VCES	20	V
	VCBO	20	V
	VEBO	2	V
	IC	80	mA
	IB	10	mA
Total power dissipation	Ptot	580	mW	TS 72C
Junction temperature	TJ	150	C
Storage temperature	TStg	-55 ... 150	C
Thermal Resistance	RthJS	135	K/W	Junction - soldering point
DC Characteristics	V(BR)CEO	12	V	IC = 1 mA, IB = 0
	ICES	-	100	A	VCE = 20 V, VBE = 0
	ICBO	-	100	nA	VCB = 10 V, IE = 0
	IEBO	-	1	A	VEB = 1 V, IC = 0
DC current gain	hFE	70 - 140	-	IC = 30 mA, VCE = 8 V, pulse measured
AC Characteristics	fT	6 - 8	GHz	IC = 50 mA, VCE = 8 V, f = 500 MHz
	Ccb	- 0.59 - 0.9	pF	VCB = 10 V, f = 1 MHz, emitter grounded
	Cce	- 0.28 -	pF	VCE = 10 V, f = 1 MHz, base grounded
	Ceb	- 2.25 -	pF	VEB = 0.5 V, f = 1 MHz, collector grounded
	NFmin	- - 1	dB	IC = 10 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz
	NFmin	- - 1.6	dB	IC = 10 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz
	Gma	- - 18	dB	IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz
Gma	- - 12	dB	IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz
\|S21e\|	- - 14.5	dB	IC = 30 mA, VCE = 8 V, ZS = ZL = 50, f = 900 MHz
\|S21e\|	- - 8.5	dB	IC = 30 mA, VCE = 8 V, ZS = ZL = 50, f = 1.8 GHz
IP3	- 29.5 -	dBm	IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz
P-1dB	- 13 -	dBm	IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz