NPN Silicon RF Transistor Infineon BFS 17W H6327 for Broadband Amplifiers up to 1 GHz Collector Current 20 mA
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Product Description
Product Overview
The BFS17W is a NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz. It operates at collector currents ranging from 1 mA to 20 mA and comes in a Pb-free (RoHS compliant) package. This device is ESD sensitive and requires careful handling.
Product Attributes
- Brand: Infineon Technologies
- Package Type: SOT323
- Certifications: Pb-free (RoHS compliant)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 15 | V | |
| Collector-base voltage | VCBO | 25 | V | |
| Emitter-base voltage | VEBO | 2.5 | V | |
| Collector current | IC | 25 | mA | |
| Peak collector current, f = 10 MHz | ICM | 50 | mA | |
| Total power dissipation1) TS 93 C | Ptot | 280 | mW | |
| Junction temperature | TJ | 150 | C | |
| Ambient temperature | TA | -65 ... 150 | C | |
| Storage temperature | TStg | -65 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point2) | RthJS | 205 | K/W | |
| DC Characteristics | ||||
| Collector-emitter breakdown voltage IC = 1 mA, IB = 0 | V(BR)CEO | 15 | V | min. |
| Collector-base cutoff current VCB = 10 V, IE = 0 | ICBO | - | A | max. |
| Collector-base cutoff current VCB = 25 V, IE = 0 | ICBO | 0.05 | A | typ. |
| Emitter-base cutoff current VEB = 2.5 V, IC = 0 | IEBO | 10 | A | max. |
| DC current gain IC = 2 mA, VCE = 1 V, pulse measured | hFE | 40 | - | min. |
| DC current gain IC = 25 mA, VCE = 1 V, pulse measured | hFE | 150 | - | min. |
| Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA | VCEsat | 0.4 | V | max. |
| AC Characteristics (verified by random sampling) | ||||
| Transition frequency IC = 2 mA, VCE = 5 V, f = 200 MHz | fT | 1.3 | GHz | typ. |
| Transition frequency IC = 25 mA, VCE = 5 V, f = 200 MHz | fT | 2.5 | GHz | typ. |
| Collector-base capacitance VCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded | Ccb | 0.8 | pF | max. |
| Collector emitter capacitance VCE = 5 V, f = 1 MHz, VBE = 0 , base grounded | Cce | 0.3 | - | typ. |
| Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded | Ceb | 1.45 | pF | max. |
| Minimum noise figure IC = 2 mA, VCE = 5 V, ZS = 50 , f = 800 MHz | NFmin | 5 | dB | max. |
| Transducer gain IC = 20 mA, VCE = 5 V, ZS = ZL = 50, f = 500 MHz | |S21e|2 | 14 | dB | min. |
| Third order intercept point at output VCE = 5 V, IC = 20 mA, f = 800 MHz, ZS = ZSopt, ZL = ZLopt | IP3 | -22.5 | dBm | typ. |
| 1dB compression point IC = 20 mA, VCE = 5 V, ZS = ZL = 50, f = 800 MHz | P-1dB | -11 | - | typ. |
1)TS is measured on the collector lead at the soldering point to the pcb
2)For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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