NPN Silicon Darlington Transistor Infineon BCV 27 E6327 with Complementary PNP Types BCV26 and BCV46

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Product Description

Product Overview

The BCV27 and BCV47 are NPN Silicon Darlington Transistors designed for general AF applications. They offer high collector current, high current gain, and are available in Pb-free (RoHS compliant) SOT23 packages. These transistors are qualified according to AEC Q101 standards and have complementary PNP types (BCV26, BCV46).

Product Attributes

Brand: Infineon Technologies
Material: Silicon
Package: SOT23
Certifications: AEC Q101, RoHS compliant
Type Marking: BCV27 (FFs), BCV47 (FGs)
Complementary Types: BCV26, BCV46 (PNP)

Technical Specifications

Parameter	Symbol	BCV27	BCV47	Unit
Maximum Ratings
Collector-emitter voltage	VCEO	30	60	V
Collector-base voltage	VCBO	40	80	V
Emitter-base voltage	VEBO	10		V
Collector current	IC	500		mA
Peak collector current, tp 10 ms	ICM	800		mA
Base current	IB	100		mA
Peak base current	IBM	200		mA
Total power dissipation- TS 74 C	Ptot	360		mW
Junction temperature	Tj	150		C
Storage temperature	Tstg	-65 ... 150		C
Thermal Resistance
Junction - soldering point	RthJS	210		K/W
DC Characteristics at TA = 25C, unless otherwise specified
Collector-emitter breakdown voltage, IC = 10 mA, IB = 0	V(BR)CEO	30	60	V
Collector-base breakdown voltage, IC = 100 A, IE = 0	V(BR)CBO	40	80	V
Emitter-base breakdown voltage, IE = 10 A, IC = 0	V(BR)EBO	10		V
Collector-base cutoff current, VCB = 30 V, IE = 0	ICBO	0.1		A
Collector-base cutoff current, VCB = 60 V, IE = 0	ICBO	0.1		A
Collector-base cutoff current, VCB = 30 V, IE = 0, TA = 150 C	ICBO	10		A
Collector-base cutoff current, VCB = 60 V, IE = 0, TA = 150 C	ICBO	10		A
Emitter-base cutoff current, VEB = 4 V, IC = 0	IEBO	100		nA
DC current gain, IC = 100 A, VCE = 1 V	hFE	4000	2000	-
DC current gain, IC = 10 mA, VCE = 5 V	hFE	10000	4000	-
DC current gain, IC = 100 mA, VCE = 5 V	hFE	20000	10000	-
DC current gain, IC = 0.5 A, VCE = 5 V	hFE	4000	2000	-
Collector-emitter saturation voltage, IC = 100 mA, IB = 0.1 mA	VCEsat	1		V
Base emitter saturation voltage, IC = 100 mA, IB = 0.1 mA	VBEsat	1.5		V
AC Characteristics at TA = 25C, unless otherwise specified
Transition frequency, IC = 50 mA, VCE = 5 V, f = 100 MHz	fT	170		MHz
Collector-base capacitance, VCB = 10 V, f = 1 MHz	Ccb	3		pF