Silicon bipolar transistor Infineon BFR 181W H6327 low noise figure designed for broadband rf amplifier
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Product Description
Product Overview
The BFR181W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It is suitable for collector currents ranging from 0.5 mA to 12 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This transistor is provided in an industry-standard, easy-to-use, Pb-free (RoHS compliant) and halogen-free package with visible leads. Qualification reports according to AEC-Q101 are available.
Product Attributes
- Brand: Infineon Technologies
- Type Marking: BFR181W
- Package: SOT323
- Certifications: RoHS compliant, AEC-Q101
- Material: Silicon Bipolar
- Features: Pb-free, Halogen free, Visible leads, ESD sensitive
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Maximum Ratings | VCEO | 12 | V | |
| VCES | 20 | V | ||
| VCBO | 20 | V | ||
| VEBO | 2 | V | ||
| IC | 20 | mA | ||
| IB | 2 | mA | ||
| Ptot (TS ≤ 90 °C) | 175 | mW | ||
| Junction temperature | TJ | 150 | °C | |
| Ambient temperature | TA | -65 ... 150 | °C | |
| Storage temperature | TStg | -65 ... 150 | °C | |
| Thermal Resistance | RthJS (Junction - soldering point) | 345 | K/W | Measured on collector lead at soldering point of pcb |
| DC Characteristics | V(BR)CEO (IC = 1 mA, IB = 0) | 12 | V | Collector-emitter breakdown voltage |
| ICES (VCE = 20 V, VBE = 0) | 100 | µA | Collector-emitter cutoff current | |
| ICBO (VCB = 10 V, IE = 0) | 100 | nA | Collector-base cutoff current | |
| IEBO (VEB = 1 V, IC = 0) | 1 | µA | Emitter-base cutoff current | |
| hFE (IC = 5 mA, VCE = 8 V, pulse measured) | 70 - 140 | - | DC current gain | |
| AC Characteristics | fT (IC = 10 mA, VCE = 8 V, f = 500 MHz) | 6 - 8 | GHz | Transition frequency |
| Ccb (VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded) | 0.29 - 0.45 | pF | Collector-base capacitance | |
| Cce (VCE = 10 V, f = 1 MHz, VBE = 0, base grounded) | 0.22 | pF | Collector emitter capacitance | |
| Ceb (VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded) | 0.35 | pF | Emitter-base capacitance | |
| NFmin (IC = 2 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz) | 0.9 | dB | Minimum noise figure | |
| NFmin (IC = 2 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz) | 1.2 | dB | Minimum noise figure | |
| Gms (IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz) | 19 | dB | Power gain, maximum stable | |
| Gma (IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz) | 13.5 | dB | Power gain, maximum available | |
| |S21e|² (IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz) | 15.5 | dB | Transducer gain | |
| |S21e|² (IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 MHz) | 10 | dB | Transducer gain |
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