Infineon BFP 450 H6327 RF transistor designed to improve system sensitivity and signal to noise ratio
Infineon RF Transistors - 7th and 8th Generation
Infineon's 7th and 8th generation RF transistors are advanced discrete Heterojunction Bipolar Transistors (HBT) designed for high-performance wireless connectivity applications. Leveraging Silicon-Germanium:Carbide (SiGe:C) technology, these transistors offer exceptional RF performance, superior signal quality, and robust reliability. They are ideal for use as Low-Noise Amplifiers (LNAs) in WiFi connectivity, enabling enhanced system sensitivity, extended communication distances, and improved Signal-to-Noise Ratio (SNR) for applications like AP routers and mobile stations. The 7th generation transistors provide ease of use and versatility for a broad frequency range, while the 8th generation offers best-in-class performance with ultra-low noise figures and high gain, crucial for emerging high-throughput wireless specifications.
Product Attributes
- Brand: Infineon
- Material: Silicon-Germanium:Carbide (SiGe:C)
- Technology: B7HF (7th Gen), B9HF (8th Gen)
- Origin: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Generation | Product Family | fT (max) | NFmin (Typical) | Gain (Gmax) | Key Applications | Key Features |
| 7th Gen | General-purpose transistors | 44 GHz | 0.45 dB (sub-GHz), 0.9 dB (5.5 GHz) | > 10 dB (at 10 GHz) | Low-Noise Amplifier (LNA), Gain block, Buffer/Driver amplifiers, Mixer, VCO | High transition frequency, High gain, High linearity, Broad frequency range (450 MHz to 12 GHz), Reduced power consumption, 1.5 kV HBM ESD robustness |
| 8th Gen | BFx840x | 80 GHz | 0.5 dB (as measured in application) | Not specified | Low-Noise Amplifier (LNA) for high-performance WiFi | Best-in-class NF and Gmax, Improved system sensitivity, Enhanced interference immunity, Suitable for high-order modulation schemes (e.g., 256 QAM) |
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